Material Science
Photoluminescence
100%
Gallium Arsenide
62%
Molecular Beam Epitaxy
39%
Luminescence
28%
Chemical Vapor Deposition
19%
Hydride
19%
Vapor Phase Epitaxy
15%
Stacking Fault
14%
Epilayers
13%
Superlattice
12%
Carrier Concentration
10%
Schottky Barrier
9%
Quantum Well
9%
Schottky Diode
9%
Annealing
9%
Optical Spectroscopy
8%
Sapphire
8%
Aluminum Nitride
7%
Epitaxial Layer
6%
Heterojunction
6%
Film
5%
Aluminium Gallium Arsenide
5%
Gallium Nitride
5%
Capacitance
5%
Doping (Additives)
5%
Oxidation Reaction
5%
Single Crystal
5%
Platelet
5%
Engineering
Gallium Arsenide
41%
Low-Temperature
38%
Defects
16%
Shallower
16%
Acceptor Level
16%
Chemical Vapor Deposition
14%
Vapor Deposition
13%
Linear Circuit
11%
Electric Network Analysis
11%
Room Temperature
9%
Carrier Concentration
8%
Band Bending
8%
Energy Engineering
7%
Deep Level
7%
Passivation
7%
Doping Level
6%
Transmissions
6%
Gaas Layer
5%
Excited State
5%
Binding Energy
5%
Basal Plane
5%
Quantum Well
5%
Barrier Height
5%
Growth Temperature
5%
Keyphrases
Gallium Arsenide
11%
4H-SiC
11%
Low-temperature Photoluminescence
11%
Photoluminescence
10%
Acceptor Level
9%
Annealing
9%
Shallow Acceptor
8%
Ion Implantation
7%
High Purity
7%
Zinc Selenide
7%
Step-based Tutoring
7%
Optical Activation
5%
Undoped
5%
Quantum Well
5%
Linear Circuit Analysis
5%
Ionization Energy
5%
Molecular Beam Epitaxy
5%