Grants per year
Personal profile
Education/Academic qualification
PHD
… → 1981
MS
… → 1975
BS
… → 1971
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- 1 Similar Profiles
Collaborations and top research areas from the last five years
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Ultra Materials for a Resilient, Smart Electricity Grid
Goodnick, S., Saraniti, M., Singh, A., Ponce, F., Smith, D. & Nemanich, R.
8/1/20 → 7/31/24
Project: Research project
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Advanced III-N UV VCSELS Operating at 369NM with Narrow-line-width Emission
DOD: Defense Advanced Research Projects Agency (DARPA)
11/8/16 → 3/3/18
Project: Research project
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Advanced III-N UV Diode Lasers Operating at 369mm with Narrow Line Width Emission
DOD: Defense Advanced Research Projects Agency (DARPA)
1/13/15 → 11/30/16
Project: Research project
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Exploring the Effect of Diffraction Conditions on Off-Axis Phonon EELS
Wang, Y., Yang, S., Fischer, A., Grotjohn, T., Ponce, F. & Crozier, P. A., Jul 22 2023, In: Microscopy and Microanalysis. 29, 1, p. 653-655 3 p.Research output: Contribution to journal › Article › peer-review
Open Access -
Non-planar growth of high Al-mole-fraction AlGaN on patterned GaN platforms for mitigating strain-induced cracks beyond the critical layer thickness
Ando, Y., Mehnke, F., Bouchard, H., Xu, Z., Fischer, A. M., Shen, S. C., Ponce, F. A., Detchprohm, T. & Dupuis, R. D., Apr 1 2023, In: Journal of Crystal Growth. 607, 127100.Research output: Contribution to journal › Article › peer-review
1 Scopus citations -
Realizing crack-free high-aluminum-mole-fraction AlGaN on patterned GaN beyond the critical layer thickness
Mehnke, F., Fischer, A. M., Xu, Z., Bouchard, H., Detchprohm, T., Shen, S. C., Ponce, F. A. & Dupuis, R. D., Feb 21 2022, In: Journal of Applied Physics. 131, 7, 073103.Research output: Contribution to journal › Article › peer-review
Open Access3 Scopus citations -
Nanostructured materials for high efficiency solar cells
Micha, D. N., Jakomin, R., Kawabata, R. M. S., Pires, M. P., Ponce, F. A. & Souza, P. L., Jan 1 2021, Sustainable Material Solutions for Solar Energy Technologies: Processing Techniques and Applications. Elsevier, p. 201-227 27 p.Research output: Chapter in Book/Report/Conference proceeding › Chapter
3 Scopus citations -
The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices
Fu, K., Fu, H., Deng, X., Su, P. Y., Liu, H., Hatch, K., Cheng, C. Y., Messina, D., Meidanshahi, R. V., Peri, P., Yang, C., Yang, T. H., Montes, J., Zhou, J., Qi, X., Goodnick, S. M., Ponce, F. A., Smith, D. J., Nemanich, R. & Zhao, Y., May 31 2021, In: Applied Physics Letters. 118, 22, 222104.Research output: Contribution to journal › Article › peer-review
Open Access12 Scopus citations
Press/Media
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ASU physics alum Harry Kolar earns IBM fellowship
5/31/18
1 item of Media coverage
Press/Media: Press / Media
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ASU physics professor awarded international fellowship
5/31/18
1 item of Media coverage
Press/Media: Press / Media