Grants per year
Personal profile
Education/Academic qualification
PHD, Stanford University
… → 1981
MS, University of Maryland-College Park
… → 1975
BS, National University of Ingenieria
… → 1971
Fingerprint
- 1 Similar Profiles
Collaborations and top research areas from the last five years
-
FuSe-TG: Monolithic Heterointegration of GeSn and SiGeSn Alloys with Silicon Platforms
Menendez, J. (PI), Kouvetakis, J. (CoI), Singh, A. (CoI) & Ponce, F. (CoI)
National Science Foundation (NSF)
5/15/23 → 4/30/25
Project: Research project
-
Ultra Materials for a Resilient, Smart Electricity Grid
Goodnick, S. (CoI), Saraniti, M. (CoI), Singh, A. (CoI), Ponce, F. (CoI), Smith, D. (CoI), Nemanich, R. (PI) & Fu, H. (CoI)
8/1/20 → 7/31/24
Project: Research project
-
MRI: Acquisition of an Energy-Filtering, Direct Electron Detector for Advanced Soft and Hard Materials Research within situ Transmission Electron Microscopy
Crozier, P. (PI), Sharp, T. (CoI), Smith, D. (CoI), Zhang, Y.-H. (CoI), Ponce, F. (CoI), Nannenga, B. (CoI), Seo, D. (CoI), Treacy, M. (CoI), Lin, J. (CoI), Nemanich, R. (CoI), Chan, C. (CoI), Solanki, K. (CoI), Liu, J. (CoI), Rajagopalan, J. (CoI), Holman, Z. (CoI), Bertoni, M. (CoI), Tongay, S. A. (CoI), Green, M. (CoI), Sayres, S. (CoI), Chiu, P.-L. (CoI) & Fini, E. (CoI)
National Science Foundation (NSF)
9/1/19 → 8/31/22
Project: Research project
-
Effective Selective Area Doping for GAN Vertical Power Transistors Enabled by Innovative Material Engineering
Goodnick, S. (CoI), Smith, D. (CoI), Ponce, F. (CoI) & Nemanich, R. (CoI)
DOE: Advanced Research Projects Agency-Energy (ARPA-E)
9/18/17 → 6/17/21
Project: Research project
-
Advanced III-N UV VCSELS Operating at 369NM with Narrow-line-width Emission
Ponce, F. (PI)
DOD: Defense Advanced Research Projects Agency (DARPA)
11/8/16 → 3/3/18
Project: Research project
-
Exploring the Effect of Diffraction Conditions on Off-Axis Phonon EELS
Wang, Y., Yang, S., Fischer, A., Grotjohn, T., Ponce, F. & Crozier, P. A., Jul 22 2023, In: Microscopy and Microanalysis. 29, 1, p. 653-655 3 p.Research output: Contribution to journal › Article › peer-review
Open Access -
GaN-Based Threshold Switching Behaviors at High Temperatures Enabled by Interface Engineering for Harsh Environment Memory Applications
Fu, K., Luo, S., Fu, H., Hatch, K., Alugubelli, S. R., Liu, H., Li, T., Xu, M., Mei, Z., He, Z., Zhou, J., Chang, C., Ponce, F. A., Nemanich, R. & Zhao, Y., 2023, (Accepted/In press) In: IEEE Transactions on Electron Devices. p. 1-5 5 p.Research output: Contribution to journal › Article › peer-review
7 Scopus citations -
Non-planar growth of high Al-mole-fraction AlGaN on patterned GaN platforms for mitigating strain-induced cracks beyond the critical layer thickness
Ando, Y., Mehnke, F., Bouchard, H., Xu, Z., Fischer, A. M., Shen, S. C., Ponce, F. A., Detchprohm, T. & Dupuis, R. D., Apr 1 2023, In: Journal of Crystal Growth. 607, 127100.Research output: Contribution to journal › Article › peer-review
2 Scopus citations -
The effect of step-flow growth on the surface morphology and optical properties of thick diamond films
Fischer, A. M., Bhattacharya, A., Hardy, A., Grotjohn, T. A. & Ponce, F. A., Dec 2023, In: Diamond and Related Materials. 140, 110507.Research output: Contribution to journal › Article › peer-review
2 Scopus citations -
Realizing crack-free high-aluminum-mole-fraction AlGaN on patterned GaN beyond the critical layer thickness
Mehnke, F., Fischer, A. M., Xu, Z., Bouchard, H., Detchprohm, T., Shen, S. C., Ponce, F. A. & Dupuis, R. D., Feb 21 2022, In: Journal of Applied Physics. 131, 7, 073103.Research output: Contribution to journal › Article › peer-review
Open Access6 Scopus citations