Grants per year
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Dive into the research topics where Houqiang Fu is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
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Collaborations and top research areas from the last five years
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Grants
- 4 Finished
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GaN High Electron Mobility Transistors (HEMTs) based Power Integrated Circuits for Efficient Power Conversions
Fu, H. (PI)
4/1/23 → 3/31/25
Project: Research project
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Reliability Study and Failure Analysis of Wide Bandgap GaN Vertical Power Devices: From Materials to Devices
Fu, H. (PI)
National Science Foundation (NSF)
10/1/22 → 8/31/25
Project: Research project
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Stimulated Brillouin Scattering with Visible Integrated Photonics
Fu, H. (PI)
DOD-ARMY-ARL: Army Research Office (ARO)
8/1/21 → 7/31/24
Project: Research project
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Ultra Materials for a Resilient, Smart Electricity Grid
Goodnick, S. (CoI), Saraniti, M. (CoI), Singh, A. (CoI), Ponce, F. (CoI), Smith, D. (CoI), Nemanich, R. (PI) & Fu, H. (CoI)
8/1/20 → 7/31/24
Project: Research project
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Modeling the Changes in the Current-Voltage Characteristics of Vertical GaN-on-GaN p-i-n Diodes Under Electrical Stress
Vianello, A. M., Longato, S. L., Fregolent, M., Rampazzo, F., Buffolo, M., Wang, D., Da, B., Fu, H., Luo, S., Chang, C., Zhao, Y., Rossetto, I., De Santi, C., Meneghesso, G., Zanoni, E. & Meneghini, M., 2026, (Accepted/In press) In: IEEE Transactions on Electron Devices.Research output: Contribution to journal › Article › peer-review
Open Access -
Nitrogen doping of metal-organic chemical vapor deposition β-Ga2O3 using nitric oxide
Alema, F., Brand, W., Mudiyanselage, D. H., Da, B., Fu, H. & Osinsky, A., May 1 2026, In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 44, 3, 032701.Research output: Contribution to journal › Article › peer-review
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Acoustic phonon characteristics of (001) and (Formula presented) β-Ga2O3 single crystals investigated with Brillouin-Mandelstam light scattering spectroscopy
Wright, D., Guzman, E., Bijoy, M. S. H., Wilson, R. B., Mudiyanselage, D. H., Fu, H., Kargar, F. & Balandin, A. A., Aug 4 2025, In: Applied Physics Letters. 127, 5, 052201.Research output: Contribution to journal › Article › peer-review
2 Link opens in a new tab Scopus citations -
Defects in InGaN QW Structures: Microscopic Properties and Modeling
Meneghini, M., Nicoletto, M., Piva, F., Roccato, N., Caria, A., Rampazzo, F., De Santi, C., Buffolo, M., Rossi, F., Mura, G., Gasparotto, A., Becht, C., Kusch, G., Ji, Y., Huang, X., Fu, H., Chen, H., Zhao, Y., Trivellin, N. & Meneghesso, G. & 4 others, , 2025, Light-Emitting Devices, Materials, and Applications XXIX. Kim, J. K., Krames, M. R. & Strassburg, M. (eds.). SPIE, 133860A. (Proceedings of SPIE - The International Society for Optical Engineering; vol. 13386).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
Open Access -
Effects of oxygen thermal annealing on AlN trench metal-semiconductor field-effect transistors (MESFETs) on single-crystal AlN substrates
Da, B., Mudiyanselage, D. H., Wang, D., Xie, J., Wei, X. & Fu, H., Dec 8 2025, In: Applied Physics Letters. 127, 23, 233504.Research output: Contribution to journal › Article › peer-review
Press/Media
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Reports on Applied Physics from Arizona State University Provide New Insights [Effects of Oxygen Thermal Annealing On Aln Trench Metal-semiconductor Field-effect Transistors (Mesfets) On Single-crystal Aln Substrates]
1/22/26
1 item of Media coverage
Press/Media: Press / Media
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Agnitron: Driving ultra-wide-bandgap breakthroughs
9/24/25
1 item of Media coverage
Press/Media: Press / Media
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Researchers from Iowa State University Report Recent Findings in Lactate Dehydrogenases (Ultrasensitive Detection of Lactate Dehydrogenase Using Gan Hemt Sensors)
7/23/25
1 item of Media coverage
Press/Media: Press / Media
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Boosting AlN-on-AlN Schottky barrier diode performance
1/15/25
1 item of Media coverage
Press/Media: Press / Media
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U.S. Patents Awarded to Inventors in Arizona (Dec. 4)
Bakkaloglu, B., Chen, Y., Fu, H., Marvi, H. & Montgomery, D.
12/4/24
1 item of Media coverage
Press/Media: Press / Media