Material Science
Field Effect Transistor
100%
Transistor
93%
Graphene
85%
Oxide Compound
81%
Boron Nitride
77%
Silicon
70%
Metal-Oxide-Semiconductor Field-Effect Transistor
68%
Schottky Barrier
44%
Charge Trapping
42%
Carbon Nanotube
38%
Two-Dimensional Material
37%
Chemical Vapor Deposition
29%
Monolayers
27%
Neuromorphic Computing
25%
Carrier Concentration
25%
Dielectric Material
24%
Density
23%
Current Voltage Characteristics
20%
Transition Metal Dichalcogenide
19%
Charge Carrier
18%
Heterojunction
15%
Anisotropy
15%
Current-Voltage Characteristic
15%
Silicon on Insulator Devices
15%
Conductor
15%
Contact Resistance
11%
Carrier Mobility
10%
Defect Density
7%
Carrier Transport
7%
Superlattice
6%
Switch
6%
Electrical Property
5%
Engineering
Metal-Oxide-Semiconductor Field-Effect Transistor
59%
Field-Effect Transistor
54%
Two Dimensional
38%
Silicon on Insulator
38%
Current Drain
36%
Gate Bias
35%
Nitride
31%
Graphene
31%
Experimental Result
27%
Interface Trap
22%
Ionizing Radiation
22%
Schottky Barrier
19%
Surface Potential
19%
Dot Product
18%
Charge Carrier
18%
Carrier Density
18%
Scattering Effect
18%
Linear Dependence
15%
Depletion Region
15%
Computer Aided Design
15%
Artificial Neural Network
15%
Spontaneous Formation
15%
Dose Rate
15%
Fit Model
15%
Cryogenic Temperature
15%
Digital Flip-Flop
15%
Rate Analysis
15%
Metal Oxide Semiconductor
15%
Transition Metal Dichalcogenide
15%
Convergence Rate
15%
Induced Defect
15%
Digital Core
15%
Epitaxial Graphene
15%
Electrostatics
15%
Induced Charge
15%
Single-Walled Carbon Nanotube
15%
Coupling Effect
15%
Electrostatic Potential
10%
Nonvolatile Memory
10%
Mean Free Path
9%
Two-Dimensional Materials
9%
Resistive
9%
Channel Length
9%
Charge Density
9%
Do Effect
7%
Gate Width
7%
Metal Gate
7%
Quantum Mechanical Simulation
7%
Critical Field
7%
Metallizations
7%
Keyphrases
FDSOI
46%
Transport Properties
38%
Graphene Field-effect Transistor
31%
Total Ionizing Dose
23%
Quasi-ballistic Transport
18%
Top Gate
18%
Charged Impurity Scattering
17%
Mean Free Path
16%
CMOS Technology
15%
Charge Transport
15%
Trapping Effects
15%
Trapped Charge
15%
Barristor
15%
Coupling Factor
15%
Spiking Neural Networks
15%
Silicon-on-insulator MOSFETs
15%
Cryogenic Temperature
15%
SOI Transistor
15%
Transport in Graphene
15%
Transport Device
15%
Nanoscale Devices
15%
Gate Dielectric
15%
Metal Oxide Semiconductor
15%
Synaptic Transistor
15%
Back-gate Biasing
15%
Room Temperature Synthesis
15%
Charge Trap Transistor
15%
Virtual Source Model
15%
Ballisticity
15%
Material Compounds
15%
SOI FinFET
15%
Surface-potential-based Model
15%
Charge Carrier Scattering
15%
Epitaxial Graphene
15%
Hexagonal Boron Nitride (h-BN)
15%
Defect Scattering
15%
Dose-response
15%
Unsupervised Learning
15%
Memristor-based
15%
Nonlinear Coupling
15%
Graphene
12%
Back-gate Bias
12%
2D Hexagonal Boron Nitride
10%
Gate Hysteresis
10%
Sweep Range
10%
Charge Trapping Effect
10%
Quasi-ballistic
10%
Memristor
9%
Schrdinger
8%
High-k Dielectric
7%
