1.6/1.1 eV metamorphic GaInP/GaInAs solar cells grown by MOVPE on Ge

C. M. Fetzer; H. Yoon; R. R. King; D. C. Law; T. D. Isshiki; N. H. Karam

doi:10.1016/j.jcrysgro.2004.11.401

1.6/1.1 eV metamorphic GaInP/GaInAs solar cells grown by MOVPE on Ge

C. M. Fetzer, H. Yoon, R. R. King, D. C. Law, T. D. Isshiki, N. H. Karam

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

This paper focuses on the metal-organic vapor-phase epitaxy (MOVPE) growth of 2-junction (2J) solar cells where epitaxial Ga_0.29In _0.71P top and Ga_0.77In_0.23As bottom subcells are grown lattice-mismatched on a Ge substrate. Single-junction metamorphic devices with 23%-In GaInAs are grown on 100-mm dia. (0 0 1) Ge substrates. Layers are observed to be fully relaxed by high-resolution X-ray diffraction. Threading dislocation densities of 3.1×10⁶ cm^-2 are measured. Single-junction devices in the 1.1-eV materials demonstrate near 100% internal quantum efficiency above the band gap and an open-circuit voltage comparable to world-record silicon photovoltaic devices. The presence and strength of CuPt_B ordering is explored in controlling the band gap of the Ga_0.29In_0.71P top subcell devices between 1.647 and 1.593 eV. An order parameter of 0.28 is measured by X-ray measurement of the forbidden 12(115) reflection for the low-band gap material. The presence of low-resistance shunt pathways is observed as the present obstacle to reaching the potential efficiency of 30% for these metamorphic dual-junction devices.

Original language	English (US)
Pages (from-to)	48-56
Number of pages	9
Journal	Journal of Crystal Growth
Volume	276
Issue number	1-2
DOIs	https://doi.org/10.1016/j.jcrysgro.2004.11.401
State	Published - Mar 15 2005
Externally published	Yes

Keywords

A1. Metamorphic
A1. Terrestrial
A3. Metalorganic vapor phase epitaxy
B1. GaInAs
B1. GaInP
B1. Germanium
B3. Solar cells

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2004.11.401

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@article{3669e59c4e004d38a13dd6c2b0f606d6,

title = "1.6/1.1 eV metamorphic GaInP/GaInAs solar cells grown by MOVPE on Ge",

abstract = "This paper focuses on the metal-organic vapor-phase epitaxy (MOVPE) growth of 2-junction (2J) solar cells where epitaxial Ga0.29In 0.71P top and Ga0.77In0.23As bottom subcells are grown lattice-mismatched on a Ge substrate. Single-junction metamorphic devices with 23%-In GaInAs are grown on 100-mm dia. (0 0 1) Ge substrates. Layers are observed to be fully relaxed by high-resolution X-ray diffraction. Threading dislocation densities of 3.1×106 cm-2 are measured. Single-junction devices in the 1.1-eV materials demonstrate near 100% internal quantum efficiency above the band gap and an open-circuit voltage comparable to world-record silicon photovoltaic devices. The presence and strength of CuPtB ordering is explored in controlling the band gap of the Ga0.29In0.71P top subcell devices between 1.647 and 1.593 eV. An order parameter of 0.28 is measured by X-ray measurement of the forbidden 12(115) reflection for the low-band gap material. The presence of low-resistance shunt pathways is observed as the present obstacle to reaching the potential efficiency of 30% for these metamorphic dual-junction devices.",

keywords = "A1. Metamorphic, A1. Terrestrial, A3. Metalorganic vapor phase epitaxy, B1. GaInAs, B1. GaInP, B1. Germanium, B3. Solar cells",

author = "Fetzer, {C. M.} and H. Yoon and King, {R. R.} and Law, {D. C.} and Isshiki, {T. D.} and Karam, {N. H.}",

note = "Funding Information: The authors would like to thank Manuel Romero, Keith Emery, Tom Moriarty, James Kiehl and the PV Performance Characterization Team for their measurements at NREL, Mark Takahashi, Dimitri Krut, and the entire multijunction characterization team at Spectrolab. This work was supported in part by the Air Force Research Laboratory (AFRL/VS) through the Dual Use Science and Technology program AFRL Contract # F29601-98-2-0207, in part by the Department of Energy through the NREL High-Performance Photovoltaics program (NAT-1-30620-01), and by Spectrolab, Inc.",

year = "2005",

month = mar,

day = "15",

doi = "10.1016/j.jcrysgro.2004.11.401",

language = "English (US)",

volume = "276",

pages = "48--56",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1-2",

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TY - JOUR

T1 - 1.6/1.1 eV metamorphic GaInP/GaInAs solar cells grown by MOVPE on Ge

AU - Fetzer, C. M.

AU - Yoon, H.

AU - King, R. R.

AU - Law, D. C.

AU - Isshiki, T. D.

AU - Karam, N. H.

N1 - Funding Information: The authors would like to thank Manuel Romero, Keith Emery, Tom Moriarty, James Kiehl and the PV Performance Characterization Team for their measurements at NREL, Mark Takahashi, Dimitri Krut, and the entire multijunction characterization team at Spectrolab. This work was supported in part by the Air Force Research Laboratory (AFRL/VS) through the Dual Use Science and Technology program AFRL Contract # F29601-98-2-0207, in part by the Department of Energy through the NREL High-Performance Photovoltaics program (NAT-1-30620-01), and by Spectrolab, Inc.

PY - 2005/3/15

Y1 - 2005/3/15

N2 - This paper focuses on the metal-organic vapor-phase epitaxy (MOVPE) growth of 2-junction (2J) solar cells where epitaxial Ga0.29In 0.71P top and Ga0.77In0.23As bottom subcells are grown lattice-mismatched on a Ge substrate. Single-junction metamorphic devices with 23%-In GaInAs are grown on 100-mm dia. (0 0 1) Ge substrates. Layers are observed to be fully relaxed by high-resolution X-ray diffraction. Threading dislocation densities of 3.1×106 cm-2 are measured. Single-junction devices in the 1.1-eV materials demonstrate near 100% internal quantum efficiency above the band gap and an open-circuit voltage comparable to world-record silicon photovoltaic devices. The presence and strength of CuPtB ordering is explored in controlling the band gap of the Ga0.29In0.71P top subcell devices between 1.647 and 1.593 eV. An order parameter of 0.28 is measured by X-ray measurement of the forbidden 12(115) reflection for the low-band gap material. The presence of low-resistance shunt pathways is observed as the present obstacle to reaching the potential efficiency of 30% for these metamorphic dual-junction devices.

AB - This paper focuses on the metal-organic vapor-phase epitaxy (MOVPE) growth of 2-junction (2J) solar cells where epitaxial Ga0.29In 0.71P top and Ga0.77In0.23As bottom subcells are grown lattice-mismatched on a Ge substrate. Single-junction metamorphic devices with 23%-In GaInAs are grown on 100-mm dia. (0 0 1) Ge substrates. Layers are observed to be fully relaxed by high-resolution X-ray diffraction. Threading dislocation densities of 3.1×106 cm-2 are measured. Single-junction devices in the 1.1-eV materials demonstrate near 100% internal quantum efficiency above the band gap and an open-circuit voltage comparable to world-record silicon photovoltaic devices. The presence and strength of CuPtB ordering is explored in controlling the band gap of the Ga0.29In0.71P top subcell devices between 1.647 and 1.593 eV. An order parameter of 0.28 is measured by X-ray measurement of the forbidden 12(115) reflection for the low-band gap material. The presence of low-resistance shunt pathways is observed as the present obstacle to reaching the potential efficiency of 30% for these metamorphic dual-junction devices.

KW - A1. Metamorphic

KW - A1. Terrestrial

KW - A3. Metalorganic vapor phase epitaxy

KW - B1. GaInAs

KW - B1. GaInP

KW - B1. Germanium

KW - B3. Solar cells

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UR - http://www.scopus.com/inward/citedby.url?scp=20344375483&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2004.11.401

DO - 10.1016/j.jcrysgro.2004.11.401

M3 - Article

SN - 0022-0248

VL - 276

SP - 48

EP - 56

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-2

ER -

1.6/1.1 eV metamorphic GaInP/GaInAs solar cells grown by MOVPE on Ge

Abstract

Keywords

ASJC Scopus subject areas

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