A 14dBm 2.4GHz Power Amplifier with Digitally Controlled Tuning in 12nm FinFET CMOS Technology

Shobak Kythakyapuzha; Oren Eliezer; Jennifer Kitchen

doi:10.1109/WMCS70298.2026.11591443

A 14dBm 2.4GHz Power Amplifier with Digitally Controlled Tuning in 12nm FinFET CMOS Technology

Shobak Kythakyapuzha
, Oren Eliezer
, Jennifer Kitchen

Engineering, Ira A. Fulton Schools of (IAFSE)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A 2.4GHz power amplifier (PA) is demonstrated in a 12nm FinFET CMOS process, achieving a measured efficiency of 27% with an output power of 14 dBm and the highest reported power density of 0.7 W/mm². Operating from a 1.6V supply, the PA consumes 90 mW. The total die area is 0.27 mm², with the core occupying just 0.037 mm², making it highly suitable for cost-effective integration into large-scale system-on-chip (SoC) designs. A built-in digital calibration scheme is proposed for the reduction of harmonic content at the PA output. To the authors' knowledge, this is the first reported PA implemented in 12nm FinFET operating in the 2.4GHz ISM band.

Original language	English (US)
Title of host publication	Proceedings of the 2026 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2026
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798331564155
DOIs	https://doi.org/10.1109/WMCS70298.2026.11591443
State	Published - 2026
Event	19thIEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2026 - Waco, United States Duration: Apr 15 2026 → Apr 16 2026

Publication series

Name	Proceedings of the 2026 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2026

Conference

Conference	19thIEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2026
Country/Territory	United States
City	Waco
Period	4/15/26 → 4/16/26

Keywords

Bluetooth Low Energy transmitter
CMOS power amplifiers
harmonic suppression
inverse Class-D PA
power density
RF system-on-chip (SoC)

ASJC Scopus subject areas

Computer Networks and Communications
Hardware and Architecture
Electrical and Electronic Engineering
Instrumentation

Access to Document

10.1109/WMCS70298.2026.11591443

Cite this

Kythakyapuzha, S., Eliezer, O., & Kitchen, J. (2026). A 14dBm 2.4GHz Power Amplifier with Digitally Controlled Tuning in 12nm FinFET CMOS Technology. In Proceedings of the 2026 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2026 (Proceedings of the 2026 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2026). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WMCS70298.2026.11591443

A 14dBm 2.4GHz Power Amplifier with Digitally Controlled Tuning in 12nm FinFET CMOS Technology. / Kythakyapuzha, Shobak; Eliezer, Oren; Kitchen, Jennifer.
Proceedings of the 2026 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2026. Institute of Electrical and Electronics Engineers Inc., 2026. (Proceedings of the 2026 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2026).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kythakyapuzha, S, Eliezer, O & Kitchen, J 2026, A 14dBm 2.4GHz Power Amplifier with Digitally Controlled Tuning in 12nm FinFET CMOS Technology. in Proceedings of the 2026 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2026. Proceedings of the 2026 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2026, Institute of Electrical and Electronics Engineers Inc., 19thIEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2026, Waco, United States, 4/15/26. https://doi.org/10.1109/WMCS70298.2026.11591443

Kythakyapuzha S, Eliezer O, Kitchen J. A 14dBm 2.4GHz Power Amplifier with Digitally Controlled Tuning in 12nm FinFET CMOS Technology. In Proceedings of the 2026 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2026. Institute of Electrical and Electronics Engineers Inc. 2026. (Proceedings of the 2026 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2026). doi: 10.1109/WMCS70298.2026.11591443

Kythakyapuzha, Shobak ; Eliezer, Oren ; Kitchen, Jennifer. / A 14dBm 2.4GHz Power Amplifier with Digitally Controlled Tuning in 12nm FinFET CMOS Technology. Proceedings of the 2026 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2026. Institute of Electrical and Electronics Engineers Inc., 2026. (Proceedings of the 2026 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2026).

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abstract = "A 2.4GHz power amplifier (PA) is demonstrated in a 12nm FinFET CMOS process, achieving a measured efficiency of 27\% with an output power of 14 dBm and the highest reported power density of 0.7 W/mm2. Operating from a 1.6V supply, the PA consumes 90 mW. The total die area is 0.27 mm2, with the core occupying just 0.037 mm2, making it highly suitable for cost-effective integration into large-scale system-on-chip (SoC) designs. A built-in digital calibration scheme is proposed for the reduction of harmonic content at the PA output. To the authors' knowledge, this is the first reported PA implemented in 12nm FinFET operating in the 2.4GHz ISM band.",

keywords = "Bluetooth Low Energy transmitter, CMOS power amplifiers, harmonic suppression, inverse Class-D PA, power density, RF system-on-chip (SoC)",

author = "Shobak Kythakyapuzha and Oren Eliezer and Jennifer Kitchen",

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N2 - A 2.4GHz power amplifier (PA) is demonstrated in a 12nm FinFET CMOS process, achieving a measured efficiency of 27% with an output power of 14 dBm and the highest reported power density of 0.7 W/mm2. Operating from a 1.6V supply, the PA consumes 90 mW. The total die area is 0.27 mm2, with the core occupying just 0.037 mm2, making it highly suitable for cost-effective integration into large-scale system-on-chip (SoC) designs. A built-in digital calibration scheme is proposed for the reduction of harmonic content at the PA output. To the authors' knowledge, this is the first reported PA implemented in 12nm FinFET operating in the 2.4GHz ISM band.

AB - A 2.4GHz power amplifier (PA) is demonstrated in a 12nm FinFET CMOS process, achieving a measured efficiency of 27% with an output power of 14 dBm and the highest reported power density of 0.7 W/mm2. Operating from a 1.6V supply, the PA consumes 90 mW. The total die area is 0.27 mm2, with the core occupying just 0.037 mm2, making it highly suitable for cost-effective integration into large-scale system-on-chip (SoC) designs. A built-in digital calibration scheme is proposed for the reduction of harmonic content at the PA output. To the authors' knowledge, this is the first reported PA implemented in 12nm FinFET operating in the 2.4GHz ISM band.

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KW - harmonic suppression

KW - inverse Class-D PA

KW - power density

KW - RF system-on-chip (SoC)

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BT - Proceedings of the 2026 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2026

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A 14dBm 2.4GHz Power Amplifier with Digitally Controlled Tuning in 12nm FinFET CMOS Technology

Abstract

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Keywords

ASJC Scopus subject areas

Access to Document

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