@inproceedings{65e31a86654e4df18175f04951b2f333,
title = "A CMOS compatible, forming free TaOx ReRAM",
abstract = "Resistive random access memory (ReRAM) has become a promising candidate for next-generation high-performance nonvolatile memory that operates by electrically tuning resistance states via modulating vacancy concentrations. We demonstrate a wafer-scale process for resistive switching in tantalum oxide that is completely CMOS compatible. The resulting devices are forming-free and with greater than 1{\texttimes}105 cycle endurance.",
author = "Lohn, \{A. J.\} and Stevens, \{J. E.\} and Mickel, \{P. R.\} and Hughart, \{D. R.\} and Marinella, \{M. J.\}",
year = "2013",
doi = "10.1149/05805.0059ecst",
language = "English (US)",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "5",
pages = "59--65",
booktitle = "ECS Transactions",
edition = "5",
}