A comparison of GaN-based power stages for high-switching speed medium-power converters

Ashwath Hegde; Yu Long; Jennifer Kitchen

doi:10.1109/WiPDA.2017.8170549

A comparison of GaN-based power stages for high-switching speed medium-power converters

Ashwath Hegde, Yu Long, Jennifer Kitchen

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Three GaN-based buck switching power stage architectures are implemented using discrete GaN High Electron Mobility (HEMTs) devices and compared with respect to efficiency, switching speed (2 to 10MHz), and power conversion ratio for medium-power applications. The three presented power stage architectures are: a single-stage buck, a multi-phase buck with 2 phases, and a stacked interleaved configuration. This work theoretically evaluates the various architectures, details the designs, and presents the measurement results. All of the implemented power stages achieve over 80% peak efficiency, and switching speeds up to 10MHz with high conversion ratio from 24V input to 5V output. The use of GaN power devices in the power stage for such applications provides small form factor, high current density, and high efficiency at high switching speeds. Each architecture has its inherent advantages for non-isolated large conversion ratio point-of-load applications, which will be discussed in this work.

Original language	English (US)
Title of host publication	2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	213-219
Number of pages	7
Volume	2017-December
ISBN (Electronic)	9781538631171
DOIs	https://doi.org/10.1109/WiPDA.2017.8170549
State	Published - Dec 7 2017
Event	5th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017 - Albuquerque, United States Duration: Oct 30 2017 → Nov 1 2017

Other

Other	5th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017
Country/Territory	United States
City	Albuquerque
Period	10/30/17 → 11/1/17

Keywords

Buck
COTS
Efficiency
GaN
HEMT
Multi-phase
Single-stage
Stacked interleaved
Switching frequency

ASJC Scopus subject areas

Energy Engineering and Power Technology
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/WiPDA.2017.8170549

Cite this

A comparison of GaN-based power stages for high-switching speed medium-power converters. / Hegde, Ashwath; Long, Yu; Kitchen, Jennifer.
2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017. Vol. 2017-December Institute of Electrical and Electronics Engineers Inc., 2017. p. 213-219.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hegde, A, Long, Y & Kitchen, J 2017, A comparison of GaN-based power stages for high-switching speed medium-power converters. in 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017. vol. 2017-December, Institute of Electrical and Electronics Engineers Inc., pp. 213-219, 5th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017, Albuquerque, United States, 10/30/17. https://doi.org/10.1109/WiPDA.2017.8170549

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N2 - Three GaN-based buck switching power stage architectures are implemented using discrete GaN High Electron Mobility (HEMTs) devices and compared with respect to efficiency, switching speed (2 to 10MHz), and power conversion ratio for medium-power applications. The three presented power stage architectures are: a single-stage buck, a multi-phase buck with 2 phases, and a stacked interleaved configuration. This work theoretically evaluates the various architectures, details the designs, and presents the measurement results. All of the implemented power stages achieve over 80% peak efficiency, and switching speeds up to 10MHz with high conversion ratio from 24V input to 5V output. The use of GaN power devices in the power stage for such applications provides small form factor, high current density, and high efficiency at high switching speeds. Each architecture has its inherent advantages for non-isolated large conversion ratio point-of-load applications, which will be discussed in this work.

AB - Three GaN-based buck switching power stage architectures are implemented using discrete GaN High Electron Mobility (HEMTs) devices and compared with respect to efficiency, switching speed (2 to 10MHz), and power conversion ratio for medium-power applications. The three presented power stage architectures are: a single-stage buck, a multi-phase buck with 2 phases, and a stacked interleaved configuration. This work theoretically evaluates the various architectures, details the designs, and presents the measurement results. All of the implemented power stages achieve over 80% peak efficiency, and switching speeds up to 10MHz with high conversion ratio from 24V input to 5V output. The use of GaN power devices in the power stage for such applications provides small form factor, high current density, and high efficiency at high switching speeds. Each architecture has its inherent advantages for non-isolated large conversion ratio point-of-load applications, which will be discussed in this work.

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ER -

A comparison of GaN-based power stages for high-switching speed medium-power converters

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Keywords

ASJC Scopus subject areas

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