TY - JOUR
T1 - An indirect impedance characterization method for monolithic THz antennas using coplanar probe measurements
AU - Topalli, Kagan
AU - Trichopoulos, Georgios C.
AU - Sertel, Kubilay
N1 - Funding Information: Manuscript received October 05, 2011; revised December 09, 2011; accepted December 09, 2011. Date of publication December 21, 2011; date of current version March 19, 2012. This work was supported by the Ohio State University, ElectroScience Laboratory Consortium on Electromagnetics and Radio Frequencies.
PY - 2012
Y1 - 2012
N2 - We develop a simple and robust impedance characterization method for planar THz antennas with micron- and submicron-size port geometries. Such antennas are often encountered in THz sensing applications where an ultrafast electronic device, such as a Schottky junction or a heterostructure backward diode, is integrated with a planar antenna structure. Standard probe characterization of such antennas at the device port is not currently possible due to the large contact areas required. The proposed method allows for indirect characterization of antenna impedance seen at the device port using measurements collected at a more suitable, remote location on the antenna plane. Three S 11 measurements are performed using contact probes at a larger pad on the antenna periphery, using three terminations (short, open, and a resistive load) of the port under consideration. Through a simple relation, the measured data set is used to compute the port-impedance indirectly. Experimental results are presented to illustrate the accuracy of the proposed approach.
AB - We develop a simple and robust impedance characterization method for planar THz antennas with micron- and submicron-size port geometries. Such antennas are often encountered in THz sensing applications where an ultrafast electronic device, such as a Schottky junction or a heterostructure backward diode, is integrated with a planar antenna structure. Standard probe characterization of such antennas at the device port is not currently possible due to the large contact areas required. The proposed method allows for indirect characterization of antenna impedance seen at the device port using measurements collected at a more suitable, remote location on the antenna plane. Three S 11 measurements are performed using contact probes at a larger pad on the antenna periphery, using three terminations (short, open, and a resistive load) of the port under consideration. Through a simple relation, the measured data set is used to compute the port-impedance indirectly. Experimental results are presented to illustrate the accuracy of the proposed approach.
KW - Antenna measurements
KW - THz antennas
KW - focal plane arrays (FPAs)
KW - terahertz imaging
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U2 - 10.1109/LAWP.2011.2180885
DO - 10.1109/LAWP.2011.2180885
M3 - Article
SN - 1536-1225
VL - 11
SP - 3
EP - 5
JO - IEEE Antennas and Wireless Propagation Letters
JF - IEEE Antennas and Wireless Propagation Letters
M1 - 6111241
ER -