Analysis of residual stress in polycrystalline silver thin films by x-ray diffraction

Terry Alford; Yuxiao Zeng; Y. L. Zou; F. Deng; S. S. Lau; T. Laursen; B. Manfred Ullrich

Analysis of residual stress in polycrystalline silver thin films by x-ray diffraction

Terry Alford
, Yuxiao Zeng
, Y. L. Zou
, F. Deng
, S. S. Lau
, T. Laursen
, B. Manfred Ullrich

Chemical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The stress state of evaporated Ag films prepared on Ti underlayers before and after encapsulation process has been studied by x-ray diffraction using a `sin ²ψ' technique. A low tensile stress of approximately 61 MPa was measured in the as-deposited Ag films. The stress was caused by nonequilibrium growth during film deposition and resulted in a lattice tension state in the film plane and a lattice compression state along the film normal. Thermal mismatch stress was produced by the encapsulation process at 600 °C, but most of this stress relaxed during the cooling stage, and a residual tensile stress of approximately 320 MPa in the film plane was determined.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Publisher	MRS
Pages	293-298
Number of pages	6
Volume	472
State	Published - 1997
Event	Proceedings of the 1997 MRS Spring Symposium - San Francisco, CA, USA Duration: Apr 1 1997 → Apr 4 1997

Conference

Conference	Proceedings of the 1997 MRS Spring Symposium
City	San Francisco, CA, USA
Period	4/1/97 → 4/4/97

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

@inproceedings{c6b9aa33e26a48ce9d786575006089be,

title = "Analysis of residual stress in polycrystalline silver thin films by x-ray diffraction",

abstract = "The stress state of evaporated Ag films prepared on Ti underlayers before and after encapsulation process has been studied by x-ray diffraction using a `sin 2ψ' technique. A low tensile stress of approximately 61 MPa was measured in the as-deposited Ag films. The stress was caused by nonequilibrium growth during film deposition and resulted in a lattice tension state in the film plane and a lattice compression state along the film normal. Thermal mismatch stress was produced by the encapsulation process at 600 °C, but most of this stress relaxed during the cooling stage, and a residual tensile stress of approximately 320 MPa in the film plane was determined. ",

author = "Terry Alford and Yuxiao Zeng and Zou, \{Y. L.\} and F. Deng and Lau, \{S. S.\} and T. Laursen and Ullrich, \{B. Manfred\}",

year = "1997",

language = "English (US)",

volume = "472",

pages = "293--298",

booktitle = "Materials Research Society Symposium - Proceedings",

publisher = "MRS",

note = "Proceedings of the 1997 MRS Spring Symposium ; Conference date: 01-04-1997 Through 04-04-1997",

}

TY - GEN

T1 - Analysis of residual stress in polycrystalline silver thin films by x-ray diffraction

AU - Alford, Terry

AU - Zeng, Yuxiao

AU - Zou, Y. L.

AU - Deng, F.

AU - Lau, S. S.

AU - Laursen, T.

AU - Ullrich, B. Manfred

PY - 1997

Y1 - 1997

N2 - The stress state of evaporated Ag films prepared on Ti underlayers before and after encapsulation process has been studied by x-ray diffraction using a `sin 2ψ' technique. A low tensile stress of approximately 61 MPa was measured in the as-deposited Ag films. The stress was caused by nonequilibrium growth during film deposition and resulted in a lattice tension state in the film plane and a lattice compression state along the film normal. Thermal mismatch stress was produced by the encapsulation process at 600 °C, but most of this stress relaxed during the cooling stage, and a residual tensile stress of approximately 320 MPa in the film plane was determined.

AB - The stress state of evaporated Ag films prepared on Ti underlayers before and after encapsulation process has been studied by x-ray diffraction using a `sin 2ψ' technique. A low tensile stress of approximately 61 MPa was measured in the as-deposited Ag films. The stress was caused by nonequilibrium growth during film deposition and resulted in a lattice tension state in the film plane and a lattice compression state along the film normal. Thermal mismatch stress was produced by the encapsulation process at 600 °C, but most of this stress relaxed during the cooling stage, and a residual tensile stress of approximately 320 MPa in the film plane was determined.

UR - https://www.scopus.com/pages/publications/0031353980

UR - https://www.scopus.com/pages/publications/0031353980#tab=citedBy

M3 - Conference contribution

VL - 472

SP - 293

EP - 298

BT - Materials Research Society Symposium - Proceedings

PB - MRS

T2 - Proceedings of the 1997 MRS Spring Symposium

Y2 - 1 April 1997 through 4 April 1997

ER -

Analysis of residual stress in polycrystalline silver thin films by x-ray diffraction

Abstract

Conference

ASJC Scopus subject areas

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