Atomic layer chemical vapor deposition of ZrO₂-based dielectric films: Nanostructure and nanochemistry

A study on atomic layer chemical vapor deposition of ZrO₂-based dielectric films was presented. It was found that the deposited layer was amorphous ZrO₂-rich Zr silicate containing about 15% by volume of embedded ZrO₂ nanocrystals, which were transformed into glass nanoceramics. It was also found that the measured equivalent oxide thickness (EOT) was not consistent with the calculated EOT using a bilayer model of ZrO₂ and SiO₂. The experimental results showed that a multiphase and heterogeneous structure were evolved which was called Zr-O/IL/Si stack.