ATOMIC STRUCTURE OF HgTe AND CdTe EPITAXIAL LAYERS GROWN BY MBE ON GaAs SUBSTRATES.

F. A. Ponce; G. B. Anderson; J. M. Ballingall

ATOMIC STRUCTURE OF HgTe AND CdTe EPITAXIAL LAYERS GROWN BY MBE ON GaAs SUBSTRATES.

F. A. Ponce
, G. B. Anderson
, J. M. Ballingall

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Using high resolution transmission electron microscopy (HRTEM) it is possible to directly image the projected structure of semiconductors with point resolutions at the atomic level. This technique has been applied to the study of interface and defect structures associated with molecular beam epitaxial (MBE) growth of HgCdTe layers on GaAs substrates. The structure of the CdTe/GaAs interfaces is described for (100) and (111) epitaxy. From the atomic structure, a model for the early stages of epitaxial growth is presented. The structure of HgTe-CdTe superlattices is discussed from the HRTEM point of view.

Original language	English (US)
Title of host publication	Materials Research Society Symposia Proceedings
Editors	R.F.C. Farrow, J.F. Schetzina, J.T. Cheung
Publisher	Materials Research Soc
Pages	199-208
Number of pages	10
ISBN (Print)	0931837553
State	Published - Dec 1 1987
Externally published	Yes

Publication series

Name	Materials Research Society Symposia Proceedings
Volume	90

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

ATOMIC STRUCTURE OF HgTe AND CdTe EPITAXIAL LAYERS GROWN BY MBE ON GaAs SUBSTRATES. / Ponce, F. A.; Anderson, G. B.; Ballingall, J. M.
Materials Research Society Symposia Proceedings. ed. / R.F.C. Farrow; J.F. Schetzina; J.T. Cheung. Materials Research Soc, 1987. p. 199-208 (Materials Research Society Symposia Proceedings; Vol. 90).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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abstract = "Using high resolution transmission electron microscopy (HRTEM) it is possible to directly image the projected structure of semiconductors with point resolutions at the atomic level. This technique has been applied to the study of interface and defect structures associated with molecular beam epitaxial (MBE) growth of HgCdTe layers on GaAs substrates. The structure of the CdTe/GaAs interfaces is described for (100) and (111) epitaxy. From the atomic structure, a model for the early stages of epitaxial growth is presented. The structure of HgTe-CdTe superlattices is discussed from the HRTEM point of view.",

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AU - Anderson, G. B.

AU - Ballingall, J. M.

PY - 1987/12/1

Y1 - 1987/12/1

N2 - Using high resolution transmission electron microscopy (HRTEM) it is possible to directly image the projected structure of semiconductors with point resolutions at the atomic level. This technique has been applied to the study of interface and defect structures associated with molecular beam epitaxial (MBE) growth of HgCdTe layers on GaAs substrates. The structure of the CdTe/GaAs interfaces is described for (100) and (111) epitaxy. From the atomic structure, a model for the early stages of epitaxial growth is presented. The structure of HgTe-CdTe superlattices is discussed from the HRTEM point of view.

AB - Using high resolution transmission electron microscopy (HRTEM) it is possible to directly image the projected structure of semiconductors with point resolutions at the atomic level. This technique has been applied to the study of interface and defect structures associated with molecular beam epitaxial (MBE) growth of HgCdTe layers on GaAs substrates. The structure of the CdTe/GaAs interfaces is described for (100) and (111) epitaxy. From the atomic structure, a model for the early stages of epitaxial growth is presented. The structure of HgTe-CdTe superlattices is discussed from the HRTEM point of view.

UR - https://www.scopus.com/pages/publications/0023561428

UR - https://www.scopus.com/pages/publications/0023561428#tab=citedBy

M3 - Conference contribution

SN - 0931837553

T3 - Materials Research Society Symposia Proceedings

SP - 199

EP - 208

BT - Materials Research Society Symposia Proceedings

A2 - Farrow, R.F.C.

A2 - Schetzina, J.F.

A2 - Cheung, J.T.

PB - Materials Research Soc

ER -

ATOMIC STRUCTURE OF HgTe AND CdTe EPITAXIAL LAYERS GROWN BY MBE ON GaAs SUBSTRATES.

Abstract

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ASJC Scopus subject areas

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