Band offset measurements of the Si3N4/GaN (0001) interface

T. E. Cook; C. C. Fulton; W. J. Mecouch; R. F. Davis; G. Lucovsky; R. J. Nemanich

doi:10.1063/1.1601314

Band offset measurements of the Si₃N₄/GaN (0001) interface

T. E. Cook, C. C. Fulton, W. J. Mecouch, R. F. Davis, G. Lucovsky, R. J. Nemanich

Research output: Contribution to journal › Article › peer-review

89 Scopus citations

Abstract

The band offset measurements of the Si₃N₄/GaN(001) interface were discussed. The n-type and the p-type GaN surfaces were automatically cleaned in NH₃ at 860 °C, and the n- and p-type surfaces showed upward bending. It was found that both the interfaces exhibited type II band alignment where the valence band maximum of GaN lies below that of Si₃N₄ valence band.

Original language	English (US)
Pages (from-to)	3949-3954
Number of pages	6
Journal	Journal of Applied Physics
Volume	94
Issue number	6
DOIs	https://doi.org/10.1063/1.1601314
State	Published - Sep 15 2003
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.1063/1.1601314

Cite this

@article{e371a439295048aea08bb5651a42f001,

title = "Band offset measurements of the Si3N4/GaN (0001) interface",

abstract = "The band offset measurements of the Si3N4/GaN(001) interface were discussed. The n-type and the p-type GaN surfaces were automatically cleaned in NH3 at 860 °C, and the n- and p-type surfaces showed upward bending. It was found that both the interfaces exhibited type II band alignment where the valence band maximum of GaN lies below that of Si3N4 valence band.",

author = "Cook, {T. E.} and Fulton, {C. C.} and Mecouch, {W. J.} and Davis, {R. F.} and G. Lucovsky and Nemanich, {R. J.}",

year = "2003",

month = sep,

day = "15",

doi = "10.1063/1.1601314",

language = "English (US)",

volume = "94",

pages = "3949--3954",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "6",

}

TY - JOUR

T1 - Band offset measurements of the Si3N4/GaN (0001) interface

AU - Cook, T. E.

AU - Fulton, C. C.

AU - Mecouch, W. J.

AU - Davis, R. F.

AU - Lucovsky, G.

AU - Nemanich, R. J.

PY - 2003/9/15

Y1 - 2003/9/15

N2 - The band offset measurements of the Si3N4/GaN(001) interface were discussed. The n-type and the p-type GaN surfaces were automatically cleaned in NH3 at 860 °C, and the n- and p-type surfaces showed upward bending. It was found that both the interfaces exhibited type II band alignment where the valence band maximum of GaN lies below that of Si3N4 valence band.

AB - The band offset measurements of the Si3N4/GaN(001) interface were discussed. The n-type and the p-type GaN surfaces were automatically cleaned in NH3 at 860 °C, and the n- and p-type surfaces showed upward bending. It was found that both the interfaces exhibited type II band alignment where the valence band maximum of GaN lies below that of Si3N4 valence band.

UR - http://www.scopus.com/inward/record.url?scp=0141919493&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0141919493&partnerID=8YFLogxK

U2 - 10.1063/1.1601314

DO - 10.1063/1.1601314

M3 - Article

SN - 0021-8979

VL - 94

SP - 3949

EP - 3954

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

ER -

Band offset measurements of the Si₃N₄/GaN (0001) interface

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this