BARRIER HEIGHTS FROM OHMIC TO BANDGAP: MODIFIED Al:GaAs SCHOTTKY DIODES BY MBE.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English (US)
Title of host publication	Technical Digest - International Electron Devices Meeting
Publisher	IEEE
Pages	119-122
Number of pages	4
State	Published - 1983
Externally published	Yes

ASJC Scopus subject areas

@inproceedings{f8461691f37a4c6fa19de512b08551a4,

title = "BARRIER HEIGHTS FROM OHMIC TO BANDGAP: MODIFIED Al:GaAs SCHOTTKY DIODES BY MBE.",

author = "Eglash, \{Stephen J.\} and Nathan Newman and Shihong Pan and Spicer, \{W. E.\} and Collins, \{Douglas M.\} and Zurakowski, \{Mark P.\}",

year = "1983",

language = "English (US)",

pages = "119--122",

booktitle = "Technical Digest - International Electron Devices Meeting",

publisher = "IEEE",

}

TY - GEN

T1 - BARRIER HEIGHTS FROM OHMIC TO BANDGAP

T2 - MODIFIED Al:GaAs SCHOTTKY DIODES BY MBE.

AU - Eglash, Stephen J.

AU - Newman, Nathan

AU - Pan, Shihong

AU - Spicer, W. E.

AU - Collins, Douglas M.

AU - Zurakowski, Mark P.

PY - 1983

Y1 - 1983

UR - https://www.scopus.com/pages/publications/0020938448

UR - https://www.scopus.com/pages/publications/0020938448#tab=citedBy

M3 - Conference contribution

SP - 119

EP - 122

BT - Technical Digest - International Electron Devices Meeting

PB - IEEE

ER -