Boron contamination and precipitation during the growth of InP

J. D. Oberstar; B. G. Streetman; J. E. Baker; Peter Williams; R. L. Henry; E. M. Swiggard

doi:10.1016/0022-0248(81)90497-8

Boron contamination and precipitation during the growth of InP

J. D. Oberstar, B. G. Streetman, J. E. Baker, Peter Williams, R. L. Henry, E. M. Swiggard

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We have examined polycrystalline and single crystal, liquid encapsulated Czochralski (LEC) grown InP for evidence of boron contamination using secondary-ion mass spectrometry (SIMS) and photoluminescence. Precipitates of boron or a boron compound have been found in InP grown by the LEC method with boric oxide (B₂O₃) encapsulation and pyrolytic boron nitride (pBN) crucibles. The density of precipatates appears to increase towards the last-to-freeze end of the boules. Neither B₂O₃ or pBN appears to be solely responsible for the observed phenomenon. At present, the source of boron contamination most consistent with our observations is the result of interaction between B₂O₃ and pBN. A diffusion coefficient of D(750°C) < × 10^-14 cm² s^-1 for boron in InP has been determined in this work.

Original language	English (US)
Pages (from-to)	443-448
Number of pages	6
Journal	Journal of Crystal Growth
Volume	54
Issue number	3
DOIs	https://doi.org/10.1016/0022-0248(81)90497-8
State	Published - Sep 1981
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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title = "Boron contamination and precipitation during the growth of InP",

abstract = "We have examined polycrystalline and single crystal, liquid encapsulated Czochralski (LEC) grown InP for evidence of boron contamination using secondary-ion mass spectrometry (SIMS) and photoluminescence. Precipitates of boron or a boron compound have been found in InP grown by the LEC method with boric oxide (B2O3) encapsulation and pyrolytic boron nitride (pBN) crucibles. The density of precipatates appears to increase towards the last-to-freeze end of the boules. Neither B2O3 or pBN appears to be solely responsible for the observed phenomenon. At present, the source of boron contamination most consistent with our observations is the result of interaction between B2O3 and pBN. A diffusion coefficient of D(750°C) < × 10-14 cm2 s-1 for boron in InP has been determined in this work.",

author = "Oberstar, {J. D.} and Streetman, {B. G.} and Baker, {J. E.} and Peter Williams and Henry, {R. L.} and Swiggard, {E. M.}",

note = "Funding Information: This work was supported in part by the Office of Naval Research under Contract N000l4-76-C-0806, the Joint Services Electronics Program (US Army, US Navy, and US Air Force) under contract N0001479-C-0424, and by NSF MRL Grant DMR-77-23999. One of us (J.D. Oberstar) wishes to acknowledge the support provided by an IBM pre-doctoral fellowship during this work.",

year = "1981",

month = sep,

doi = "10.1016/0022-0248(81)90497-8",

language = "English (US)",

volume = "54",

pages = "443--448",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

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TY - JOUR

T1 - Boron contamination and precipitation during the growth of InP

AU - Oberstar, J. D.

AU - Streetman, B. G.

AU - Baker, J. E.

AU - Williams, Peter

AU - Henry, R. L.

AU - Swiggard, E. M.

N1 - Funding Information: This work was supported in part by the Office of Naval Research under Contract N000l4-76-C-0806, the Joint Services Electronics Program (US Army, US Navy, and US Air Force) under contract N0001479-C-0424, and by NSF MRL Grant DMR-77-23999. One of us (J.D. Oberstar) wishes to acknowledge the support provided by an IBM pre-doctoral fellowship during this work.

PY - 1981/9

Y1 - 1981/9

N2 - We have examined polycrystalline and single crystal, liquid encapsulated Czochralski (LEC) grown InP for evidence of boron contamination using secondary-ion mass spectrometry (SIMS) and photoluminescence. Precipitates of boron or a boron compound have been found in InP grown by the LEC method with boric oxide (B2O3) encapsulation and pyrolytic boron nitride (pBN) crucibles. The density of precipatates appears to increase towards the last-to-freeze end of the boules. Neither B2O3 or pBN appears to be solely responsible for the observed phenomenon. At present, the source of boron contamination most consistent with our observations is the result of interaction between B2O3 and pBN. A diffusion coefficient of D(750°C) < × 10-14 cm2 s-1 for boron in InP has been determined in this work.

AB - We have examined polycrystalline and single crystal, liquid encapsulated Czochralski (LEC) grown InP for evidence of boron contamination using secondary-ion mass spectrometry (SIMS) and photoluminescence. Precipitates of boron or a boron compound have been found in InP grown by the LEC method with boric oxide (B2O3) encapsulation and pyrolytic boron nitride (pBN) crucibles. The density of precipatates appears to increase towards the last-to-freeze end of the boules. Neither B2O3 or pBN appears to be solely responsible for the observed phenomenon. At present, the source of boron contamination most consistent with our observations is the result of interaction between B2O3 and pBN. A diffusion coefficient of D(750°C) < × 10-14 cm2 s-1 for boron in InP has been determined in this work.

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DO - 10.1016/0022-0248(81)90497-8

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SP - 443

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JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 3

ER -

Boron contamination and precipitation during the growth of InP

Abstract

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