TY - GEN
T1 - Characterization of ReRAM Arrays Operating in the Pre-formed Range to Design Reliable PUFs
AU - Wilson, Taylor
AU - Jain, Saloni
AU - Garrard, Jack
AU - Cambou, Bertrand
AU - Burke, Ian
N1 - Publisher Copyright: © The Author(s), under exclusive license to Springer Nature Switzerland AG 2024.
PY - 2024
Y1 - 2024
N2 - Pre-formed Resistive Random Access Memory arrays are analyzed for the purpose of designing Physical Unclonable Functions to enhance the tamper resistance of Internet of Things devices. The evaluation includes subjecting these pre-formed arrays to repeated read operations and varying operating temperature ranges to assess their impacts on reliability. Additionally, a Ternary Addressable Public Key Infrastructure protocol is employed to generate 256-bit long keys, with error rates evaluated by comparing keys generated by the server database and client devices. To improve the bit error rate performance, fuzzy zones are implemented to mask unstable cells positioned too close to the binary threshold, and the furthermost cells from the threshold in a trit stream are selected to produce robust keys. This method accounts for inherent cycle-to-cycle variation and temperature drifts, ensuring high reproducibility. Experimental results demonstrate that the design achieves bit error rates as low as 10-8 in 256-bit long keys, averaged over one million cycles.
AB - Pre-formed Resistive Random Access Memory arrays are analyzed for the purpose of designing Physical Unclonable Functions to enhance the tamper resistance of Internet of Things devices. The evaluation includes subjecting these pre-formed arrays to repeated read operations and varying operating temperature ranges to assess their impacts on reliability. Additionally, a Ternary Addressable Public Key Infrastructure protocol is employed to generate 256-bit long keys, with error rates evaluated by comparing keys generated by the server database and client devices. To improve the bit error rate performance, fuzzy zones are implemented to mask unstable cells positioned too close to the binary threshold, and the furthermost cells from the threshold in a trit stream are selected to produce robust keys. This method accounts for inherent cycle-to-cycle variation and temperature drifts, ensuring high reproducibility. Experimental results demonstrate that the design achieves bit error rates as low as 10-8 in 256-bit long keys, averaged over one million cycles.
KW - Alumina (AlO)
KW - Bit error rates
KW - Performance metrics
KW - Physical unclonable functions
KW - Resistive RAM
UR - http://www.scopus.com/inward/record.url?scp=85198428964&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85198428964&partnerID=8YFLogxK
U2 - 10.1007/978-3-031-62273-1_21
DO - 10.1007/978-3-031-62273-1_21
M3 - Conference contribution
SN - 9783031622724
T3 - Lecture Notes in Networks and Systems
SP - 328
EP - 350
BT - Intelligent Computing - Proceedings of the 2024 Computing Conference
A2 - Arai, Kohei
PB - Springer Science and Business Media Deutschland GmbH
T2 - Science and Information Conference, SAI 2024
Y2 - 11 July 2024 through 12 July 2024
ER -