Characterization of strained silicon quantum wells and Si1-xGex heterostructures using Auger electron spectroscopy and spreading resistance profiles of bevelled structures

M. J. Rack; Trevor Thornton; Jeff Roberts; Richard Westhoff

doi:10.1088/0268-1242/15/3/312

Characterization of strained silicon quantum wells and Si_1-xGe_x heterostructures using Auger electron spectroscopy and spreading resistance profiles of bevelled structures

M. J. Rack
, Trevor Thornton
, Jeff Roberts
, Richard Westhoff

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Critical fabrication parameters of modulation-doped Si/SiGe heterostructures may be extensively and quickly characterized using a combination of spreading resistance profile measurements and scanning Auger electron spectroscopy on bevelled heterostructures. We have used this combined approach, with relatively accessible characterization tools, to determine the thickness, composition and doping concentrations in the supply, spacer, well, buffer and graded layers of the heterostructures. Depth profiles of the active layers and virtual substrate can be assessed in a straightforward manner, allowing for optimization of processing parameters and of the overall device structure.

Original language	English (US)
Pages (from-to)	291-296
Number of pages	6
Journal	Semiconductor Science and Technology
Volume	15
Issue number	3
DOIs	https://doi.org/10.1088/0268-1242/15/3/312
State	Published - Mar 2000

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/15/3/312

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Characterization of strained silicon quantum wells and Si_1-xGe_x heterostructures using Auger electron spectroscopy and spreading resistance profiles of bevelled structures. / Rack, M. J.; Thornton, Trevor; Roberts, Jeff et al.
In: Semiconductor Science and Technology, Vol. 15, No. 3, 03.2000, p. 291-296.

Research output: Contribution to journal › Article › peer-review

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abstract = "Critical fabrication parameters of modulation-doped Si/SiGe heterostructures may be extensively and quickly characterized using a combination of spreading resistance profile measurements and scanning Auger electron spectroscopy on bevelled heterostructures. We have used this combined approach, with relatively accessible characterization tools, to determine the thickness, composition and doping concentrations in the supply, spacer, well, buffer and graded layers of the heterostructures. Depth profiles of the active layers and virtual substrate can be assessed in a straightforward manner, allowing for optimization of processing parameters and of the overall device structure.",

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AU - Westhoff, Richard

PY - 2000/3

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AB - Critical fabrication parameters of modulation-doped Si/SiGe heterostructures may be extensively and quickly characterized using a combination of spreading resistance profile measurements and scanning Auger electron spectroscopy on bevelled heterostructures. We have used this combined approach, with relatively accessible characterization tools, to determine the thickness, composition and doping concentrations in the supply, spacer, well, buffer and graded layers of the heterostructures. Depth profiles of the active layers and virtual substrate can be assessed in a straightforward manner, allowing for optimization of processing parameters and of the overall device structure.

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Characterization of strained silicon quantum wells and Si_1-xGe_x heterostructures using Auger electron spectroscopy and spreading resistance profiles of bevelled structures

Abstract

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