Abstract
Thin Zr films were deposited on natural single crystal diamond (100) substrates by e-beam evaporation in ultra-high vacuum (UHV). Before metal deposition the surfaces were cleaned by UHV anneals at either 500 °C or 1150 °C. Following either one of these treatments a positive electron affinity was determined by means of UV photoemission spectroscopy (UPS). Depositing 2 angstroms of Zr induced a NEA on both surfaces. Field emission current - voltage measurements resulted in a threshold field (for a current of 0.1 μA) of 79 V/μm for positive electron affinity diamond surfaces and values as low as 20 V/μm for Zr on diamond.
| Original language | English (US) |
|---|---|
| Title of host publication | Materials Research Society Symposium - Proceedings |
| Publisher | Materials Research Society |
| Pages | 143-148 |
| Number of pages | 6 |
| Volume | 423 |
| State | Published - 1996 |
| Externally published | Yes |
| Event | Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA Duration: Apr 8 1996 → Apr 12 1996 |
Other
| Other | Proceedings of the 1996 MRS Spring Symposium |
|---|---|
| City | San Francisco, CA, USA |
| Period | 4/8/96 → 4/12/96 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials