Characterization of zirconium germanosilicide formed by solid state reaction of Zr with Si 1-xGe x alloys

Z. Wang; D. B. Aldrich; P. Goeller; Robert Nemanich; D. E. Sayers

Characterization of zirconium germanosilicide formed by solid state reaction of Zr with Si _1-xGe _x alloys

Z. Wang
, D. B. Aldrich
, P. Goeller
, Robert Nemanich
, D. E. Sayers

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have investigated the electrical and structural properties of zirconium germanosilicide (Zr-Si-Ge) films formed during the Zr-Si _1-xGe _x solid state reaction. Thin films of C49 Zr(Si _1-yGe _y) ₂ were formed from the solid phase reaction of Zr and Si _1-xGe _x bilayer structures. It was observed that Zr reacts uniformly with the Si _1-xGe _x alloy and that C49 Zr(Si _1-xGe _x) ₂ is the final phase of the Zr-Si _1-xGe _x solid phase reaction (such that y = x) for all compositions examined (x = 0.20, 0.33, and 0.50). The sheet resistance of the Zr(Si _1-xGe _x) ₂ thin films were higher than the sheet resistance measured for ZrSi ₂ films. The stability of Zr(Si _1-xGe _x) ₂ in contact with Si _1-xGe _x was investigated and no germanium segregation was detected in the Zr(Si _1-xGe _x) ₂/Si _1-xGe _x structures.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Publisher	Materials Research Society
Pages	387-392
Number of pages	6
Volume	402
State	Published - 1996
Externally published	Yes
Event	Proceedings of the 1995 MRS Fall Symposium - Boston, MA, USA Duration: Nov 27 1995 → Nov 30 1995

Other

Other	Proceedings of the 1995 MRS Fall Symposium
City	Boston, MA, USA
Period	11/27/95 → 11/30/95

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

@inproceedings{1f6f027551984dce8288b857758e55cf,

title = "Characterization of zirconium germanosilicide formed by solid state reaction of Zr with Si 1-xGe x alloys",

abstract = "We have investigated the electrical and structural properties of zirconium germanosilicide (Zr-Si-Ge) films formed during the Zr-Si 1-xGe x solid state reaction. Thin films of C49 Zr(Si 1-yGe y) 2 were formed from the solid phase reaction of Zr and Si 1-xGe x bilayer structures. It was observed that Zr reacts uniformly with the Si 1-xGe x alloy and that C49 Zr(Si 1-xGe x) 2 is the final phase of the Zr-Si 1-xGe x solid phase reaction (such that y = x) for all compositions examined (x = 0.20, 0.33, and 0.50). The sheet resistance of the Zr(Si 1-xGe x) 2 thin films were higher than the sheet resistance measured for ZrSi 2 films. The stability of Zr(Si 1-xGe x) 2 in contact with Si 1-xGe x was investigated and no germanium segregation was detected in the Zr(Si 1-xGe x) 2/Si 1-xGe x structures. ",

author = "Z. Wang and Aldrich, \{D. B.\} and P. Goeller and Robert Nemanich and Sayers, \{D. E.\}",

year = "1996",

language = "English (US)",

volume = "402",

pages = "387--392",

booktitle = "Materials Research Society Symposium - Proceedings",

publisher = "Materials Research Society",

note = "Proceedings of the 1995 MRS Fall Symposium ; Conference date: 27-11-1995 Through 30-11-1995",

}

TY - GEN

T1 - Characterization of zirconium germanosilicide formed by solid state reaction of Zr with Si 1-xGe x alloys

AU - Wang, Z.

AU - Aldrich, D. B.

AU - Goeller, P.

AU - Nemanich, Robert

AU - Sayers, D. E.

PY - 1996

Y1 - 1996

N2 - We have investigated the electrical and structural properties of zirconium germanosilicide (Zr-Si-Ge) films formed during the Zr-Si 1-xGe x solid state reaction. Thin films of C49 Zr(Si 1-yGe y) 2 were formed from the solid phase reaction of Zr and Si 1-xGe x bilayer structures. It was observed that Zr reacts uniformly with the Si 1-xGe x alloy and that C49 Zr(Si 1-xGe x) 2 is the final phase of the Zr-Si 1-xGe x solid phase reaction (such that y = x) for all compositions examined (x = 0.20, 0.33, and 0.50). The sheet resistance of the Zr(Si 1-xGe x) 2 thin films were higher than the sheet resistance measured for ZrSi 2 films. The stability of Zr(Si 1-xGe x) 2 in contact with Si 1-xGe x was investigated and no germanium segregation was detected in the Zr(Si 1-xGe x) 2/Si 1-xGe x structures.

AB - We have investigated the electrical and structural properties of zirconium germanosilicide (Zr-Si-Ge) films formed during the Zr-Si 1-xGe x solid state reaction. Thin films of C49 Zr(Si 1-yGe y) 2 were formed from the solid phase reaction of Zr and Si 1-xGe x bilayer structures. It was observed that Zr reacts uniformly with the Si 1-xGe x alloy and that C49 Zr(Si 1-xGe x) 2 is the final phase of the Zr-Si 1-xGe x solid phase reaction (such that y = x) for all compositions examined (x = 0.20, 0.33, and 0.50). The sheet resistance of the Zr(Si 1-xGe x) 2 thin films were higher than the sheet resistance measured for ZrSi 2 films. The stability of Zr(Si 1-xGe x) 2 in contact with Si 1-xGe x was investigated and no germanium segregation was detected in the Zr(Si 1-xGe x) 2/Si 1-xGe x structures.

UR - https://www.scopus.com/pages/publications/0029734383

UR - https://www.scopus.com/pages/publications/0029734383#tab=citedBy

M3 - Conference contribution

VL - 402

SP - 387

EP - 392

BT - Materials Research Society Symposium - Proceedings

PB - Materials Research Society

T2 - Proceedings of the 1995 MRS Fall Symposium

Y2 - 27 November 1995 through 30 November 1995

ER -

Characterization of zirconium germanosilicide formed by solid state reaction of Zr with Si _1-xGe _x alloys

Abstract

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ASJC Scopus subject areas

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