COMPLEMENTARY P-MODFET AND N-HB MESFET (Al,Ga)As FET'S.

Richard Kiehl; A. C. Gossard; W. Wiegmann; D. E. Ibbotson

COMPLEMENTARY P-MODFET AND N-HB MESFET (Al,Ga)As FET'S.

Richard Kiehl, A. C. Gossard, W. Wiegmann, D. E. Ibbotson

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Summary form only given. A complementary transistor structure is discussed which integrates a p-MODFET and an n-heterojunction-barrier(HB) MESFET based on the (Al,Ga)As material system. The improvement in the low-temperature transconductance of the p-MODFET over that of comparable bulk p-channel FETs, together with the excellent current-voltage characteristics realized for both the p-MODFET and the n-HB MESFET, makes this an attractive approach for the development of ultra-low-power, high speed complementary logic circuits.

Original language	English (US)
Title of host publication	Technical Digest - International Electron Devices Meeting
Publisher	IEEE
Pages	854-855
Number of pages	2
State	Published - 1984
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

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title = "COMPLEMENTARY P-MODFET AND N-HB MESFET (Al,Ga)As FET'S.",

abstract = "Summary form only given. A complementary transistor structure is discussed which integrates a p-MODFET and an n-heterojunction-barrier(HB) MESFET based on the (Al,Ga)As material system. The improvement in the low-temperature transconductance of the p-MODFET over that of comparable bulk p-channel FETs, together with the excellent current-voltage characteristics realized for both the p-MODFET and the n-HB MESFET, makes this an attractive approach for the development of ultra-low-power, high speed complementary logic circuits.",

author = "Richard Kiehl and Gossard, {A. C.} and W. Wiegmann and Ibbotson, {D. E.}",

year = "1984",

language = "English (US)",

pages = "854--855",

booktitle = "Technical Digest - International Electron Devices Meeting",

publisher = "IEEE",

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TY - GEN

T1 - COMPLEMENTARY P-MODFET AND N-HB MESFET (Al,Ga)As FET'S.

AU - Kiehl, Richard

AU - Gossard, A. C.

AU - Wiegmann, W.

AU - Ibbotson, D. E.

PY - 1984

Y1 - 1984

N2 - Summary form only given. A complementary transistor structure is discussed which integrates a p-MODFET and an n-heterojunction-barrier(HB) MESFET based on the (Al,Ga)As material system. The improvement in the low-temperature transconductance of the p-MODFET over that of comparable bulk p-channel FETs, together with the excellent current-voltage characteristics realized for both the p-MODFET and the n-HB MESFET, makes this an attractive approach for the development of ultra-low-power, high speed complementary logic circuits.

AB - Summary form only given. A complementary transistor structure is discussed which integrates a p-MODFET and an n-heterojunction-barrier(HB) MESFET based on the (Al,Ga)As material system. The improvement in the low-temperature transconductance of the p-MODFET over that of comparable bulk p-channel FETs, together with the excellent current-voltage characteristics realized for both the p-MODFET and the n-HB MESFET, makes this an attractive approach for the development of ultra-low-power, high speed complementary logic circuits.

UR - http://www.scopus.com/inward/record.url?scp=0021640352&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0021640352&partnerID=8YFLogxK

M3 - Conference contribution

SP - 854

EP - 855

BT - Technical Digest - International Electron Devices Meeting

PB - IEEE

ER -

COMPLEMENTARY P-MODFET AND N-HB MESFET (Al,Ga)As FET'S.

Abstract

ASJC Scopus subject areas

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