Compositional dependence of critical point transitions in Ge 1-xSn x alloys

Candi S. Cook; Vijay D'Costa; John Kouvetakis; Stefan Zollner; Jose Menendez

doi:10.1063/1.1993997

Compositional dependence of critical point transitions in Ge _1-xSn _x alloys

Candi S. Cook
, Vijay D'Costa
, John Kouvetakis
, Stefan Zollner
, Jose Menendez

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The compositional dependence of the E ₁, E ₁+Δ ₁, E ₀′, and E ₂ optical transition energies in Ge _1-xSn _x alloys has been measured in the 0 < x < 0.18 range. Deviations from linearity are clearly observed and characterized by a bowing parameter b. The value of this parameter is much larger in Ge _1-xSn _x alloys than in the isoelectronic Si _1-xGe _x system.

Original language	English (US)
Title of host publication	PHYSICS OF SEMICONDUCTORS
Subtitle of host publication	27th International Conference on the Physics of Semiconductors, ICPS-27
Pages	65-66
Number of pages	2
DOIs	https://doi.org/10.1063/1.1993997
State	Published - Jun 30 2005
Event	PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States Duration: Jul 26 2004 → Jul 30 2004

Publication series

Name	AIP Conference Proceedings
Volume	772

Other

Other	PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
Country/Territory	United States
City	Flagstaff, AZ
Period	7/26/04 → 7/30/04

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.1063/1.1993997

Cite this

Compositional dependence of critical point transitions in Ge _1-xSn _x alloys. / Cook, Candi S.; D'Costa, Vijay; Kouvetakis, John et al.
PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. 2005. p. 65-66 (AIP Conference Proceedings; Vol. 772).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Cook, CS, D'Costa, V, Kouvetakis, J, Zollner, S & Menendez, J 2005, Compositional dependence of critical point transitions in Ge _1-xSn _x alloys. in PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. AIP Conference Proceedings, vol. 772, pp. 65-66, PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27, Flagstaff, AZ, United States, 7/26/04. https://doi.org/10.1063/1.1993997

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