Abstract
Transient ionizing radiation fields have been observed to cause substantial optical loss in undoped LiNbO 3 crystals operating at 1.06 microns. This loss is slow to recover and makes the selection of this material for Q-switch applications in radiation environments unfeasible. We have studied the effects of Mg doping on the radiation response of LiNbO 3 crystals and have investigated the optical luminescence of doped and undoped samples. Our results indicate a strong correlation between crystal defects, formed primarily during crystal growth, and the radiation-induced optical loss exhibited by these materials. These findings have enabled us to produce radiation-hard LiNbO 3 crystals for use in high gamma-field environments.
| Original language | English (US) |
|---|---|
| Article number | NN7.3 |
| Pages (from-to) | 301-306 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium Proceedings |
| Volume | 851 |
| State | Published - 2005 |
| Event | 2004 MRS Fall Meeting - Boston, MA, United States Duration: Nov 29 2004 → Dec 3 2004 |
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering