This article reports the temperature-dependent characterization and analysis of quasi-ballistic transport in fully depleted silicon-on-insulator (FD-SOI) metal-oxide-semiconductor field-effect-transistors (MOSFETs) from a 22-nm commercial CMOS technology. Measurements of current-voltage (I-V) characteristics for temperatures ranging from 10 up to 300 K are presented in this article. Key electrical parameters are extracted as a function of temperature, including threshold voltage, subthreshold swing, ON-state current, series resistance, mobility, mean free path, and ballistic ratio. An experimentally validated virtual source modeling approach that incorporates back-gate biasing is presented in this article for temperatures down to 10 K. A comparison with bulk devices reveals less reduction in ballisticity at low temperatures and is attributed to a smaller contribution from ionized impurity scattering due to lower doping in the fully depleted (FD) channel.

Original languageEnglish (US)
Pages (from-to)1306-1312
Number of pages7
JournalIEEE Transactions on Electron Devices
Issue number3
StatePublished - Mar 1 2022


  • Ballistic transport
  • Cmos
  • Compact model
  • Cryogenic
  • Mean free path
  • Metal oxide semiconductor field-effect-transistor (mosfet)
  • Mobility
  • Nanoscale.

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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