Delta-doped AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with high breakdown voltages

Z. Y. Fan; J. Li; J. Y. Lin; H. X. Jiang

doi:10.1063/1.1527984

Delta-doped AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with high breakdown voltages

Z. Y. Fan, J. Li, J. Y. Lin, H. X. Jiang

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

The fabrication and dc characteristics of AlGaN/GaN-based heterostructure field-effect transistors (HFET) were reported. The device grown on sapphire substrates has a high drain-current-driving and gate-control capabilities. The incorporation of the SiO₂ insulated gate and the δ-doped barrier into HFET structures reduces the gate leakage and improves the channel carrier mobility. The device is capable to deliver high electron density yet ensures an excellent pinch-off property.

Original language	English (US)
Pages (from-to)	4649-4651
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	24
DOIs	https://doi.org/10.1063/1.1527984
State	Published - Dec 9 2002
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1527984

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abstract = "The fabrication and dc characteristics of AlGaN/GaN-based heterostructure field-effect transistors (HFET) were reported. The device grown on sapphire substrates has a high drain-current-driving and gate-control capabilities. The incorporation of the SiO2 insulated gate and the δ-doped barrier into HFET structures reduces the gate leakage and improves the channel carrier mobility. The device is capable to deliver high electron density yet ensures an excellent pinch-off property.",

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AU - Li, J.

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AU - Jiang, H. X.

PY - 2002/12/9

Y1 - 2002/12/9

N2 - The fabrication and dc characteristics of AlGaN/GaN-based heterostructure field-effect transistors (HFET) were reported. The device grown on sapphire substrates has a high drain-current-driving and gate-control capabilities. The incorporation of the SiO2 insulated gate and the δ-doped barrier into HFET structures reduces the gate leakage and improves the channel carrier mobility. The device is capable to deliver high electron density yet ensures an excellent pinch-off property.

AB - The fabrication and dc characteristics of AlGaN/GaN-based heterostructure field-effect transistors (HFET) were reported. The device grown on sapphire substrates has a high drain-current-driving and gate-control capabilities. The incorporation of the SiO2 insulated gate and the δ-doped barrier into HFET structures reduces the gate leakage and improves the channel carrier mobility. The device is capable to deliver high electron density yet ensures an excellent pinch-off property.

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ER -

Delta-doped AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with high breakdown voltages

Abstract

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