Delta-doped AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with high breakdown voltages

Engineering

• Breakdown Voltage 100%
• Heterojunctions 100%
• Field-Effect Transistor 100%
• Metal Oxide Semiconductor 100%
• Control Gate 33%
• Carrier Mobility 33%
• Sapphire Substrate 33%
• Current Drain 33%

Material Science

• Heterojunction 100%
• Metal Oxide 100%
• Field Effect Transistor 100%
• Oxide Semiconductor 100%
• Carrier Concentration 33%
• Carrier Mobility 33%
• Sapphire 33%

Keyphrases

• AlGaN-GaN 100%
• High Electron Density 33%
• Pinch-off 33%
• Insulated Gate 33%
• Fabrication Characteristics 33%
• Current Driving 33%
• DC Characteristics 33%
• High Drain Current 33%