Direct Bandgap Electroluminescence from SiGeSn/GeSn Double-Heterostructure Monolithically Grown on Si

Yiyin Zhou; Yuanhao Miao; Solomon Ojo; Grey Abernathy; Wei Du; Greg Sun; Richard Soref; Jifeng Liu; Yong Hang Zhang; Mansour Mortazavi; Baohua Li; Shui Qing Yu

Direct Bandgap Electroluminescence from SiGeSn/GeSn Double-Heterostructure Monolithically Grown on Si

Yiyin Zhou, Yuanhao Miao, Solomon Ojo, Grey Abernathy, Wei Du, Greg Sun, Richard Soref, Jifeng Liu, Yong Hang Zhang, Mansour Mortazavi, Baohua Li, Shui Qing Yu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

Electroluminescence from direct bandgap GeSn double-heterostructure light-emitting diodes grown on Si is presented. Using SiGeSn as the barrier provides better carrier confinement compared GeSn barrier, as evidenced by enhanced emission intensity.

Original language	English (US)
Title of host publication	2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781943580767
State	Published - May 2020
Event	2020 Conference on Lasers and Electro-Optics, CLEO 2020 - San Jose, United States Duration: May 10 2020 → May 15 2020

Publication series

Name	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	2020-May

Conference

Conference	2020 Conference on Lasers and Electro-Optics, CLEO 2020
Country/Territory	United States
City	San Jose
Period	5/10/20 → 5/15/20

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

Zhou, Y., Miao, Y., Ojo, S., Abernathy, G., Du, W., Sun, G., Soref, R., Liu, J., Zhang, Y. H., Mortazavi, M., Li, B., & Yu, S. Q. (2020). Direct Bandgap Electroluminescence from SiGeSn/GeSn Double-Heterostructure Monolithically Grown on Si. In 2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings Article 9192347 (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS; Vol. 2020-May). Institute of Electrical and Electronics Engineers Inc..

Direct Bandgap Electroluminescence from SiGeSn/GeSn Double-Heterostructure Monolithically Grown on Si. / Zhou, Yiyin; Miao, Yuanhao; Ojo, Solomon et al.
2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2020. 9192347 (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS; Vol. 2020-May).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zhou, Y, Miao, Y, Ojo, S, Abernathy, G, Du, W, Sun, G, Soref, R, Liu, J, Zhang, YH, Mortazavi, M, Li, B & Yu, SQ 2020, Direct Bandgap Electroluminescence from SiGeSn/GeSn Double-Heterostructure Monolithically Grown on Si. in 2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings., 9192347, Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, vol. 2020-May, Institute of Electrical and Electronics Engineers Inc., 2020 Conference on Lasers and Electro-Optics, CLEO 2020, San Jose, United States, 5/10/20.

Zhou Y, Miao Y, Ojo S, Abernathy G, Du W, Sun G et al. Direct Bandgap Electroluminescence from SiGeSn/GeSn Double-Heterostructure Monolithically Grown on Si. In 2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2020. 9192347. (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS).

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title = "Direct Bandgap Electroluminescence from SiGeSn/GeSn Double-Heterostructure Monolithically Grown on Si",

abstract = "Electroluminescence from direct bandgap GeSn double-heterostructure light-emitting diodes grown on Si is presented. Using SiGeSn as the barrier provides better carrier confinement compared GeSn barrier, as evidenced by enhanced emission intensity.",

author = "Yiyin Zhou and Yuanhao Miao and Solomon Ojo and Grey Abernathy and Wei Du and Greg Sun and Richard Soref and Jifeng Liu and Zhang, {Yong Hang} and Mansour Mortazavi and Baohua Li and Yu, {Shui Qing}",

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AU - Zhou, Yiyin

AU - Miao, Yuanhao

AU - Ojo, Solomon

AU - Abernathy, Grey

AU - Du, Wei

AU - Sun, Greg

AU - Soref, Richard

AU - Liu, Jifeng

AU - Zhang, Yong Hang

AU - Mortazavi, Mansour

AU - Li, Baohua

AU - Yu, Shui Qing

PY - 2020/5

Y1 - 2020/5

N2 - Electroluminescence from direct bandgap GeSn double-heterostructure light-emitting diodes grown on Si is presented. Using SiGeSn as the barrier provides better carrier confinement compared GeSn barrier, as evidenced by enhanced emission intensity.

AB - Electroluminescence from direct bandgap GeSn double-heterostructure light-emitting diodes grown on Si is presented. Using SiGeSn as the barrier provides better carrier confinement compared GeSn barrier, as evidenced by enhanced emission intensity.

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M3 - Conference contribution

T3 - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

BT - 2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2020 Conference on Lasers and Electro-Optics, CLEO 2020

Y2 - 10 May 2020 through 15 May 2020

ER -

Direct Bandgap Electroluminescence from SiGeSn/GeSn Double-Heterostructure Monolithically Grown on Si

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ASJC Scopus subject areas

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