Doping-induced type-II to type-I transition and mid-IR optical gain in InAs/AlSb quantum wells

K. I. Kolokolov; Cun-Zheng Ning

doi:10.1117/12.530465

Doping-induced type-II to type-I transition and mid-IR optical gain in InAs/AlSb quantum wells

K. I. Kolokolov
, Cun-Zheng Ning

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

We study effects of modulation doping in a type-II quantum well by performing a self-consistent band structure calculation using the 8-band k · p theory. We show that modulation doping can convert a type-II quantum well structures into type-I. The associated band bending and charge redistribution lead to strong interband transition in such type-II structures comparable to that of a type-I quantum well. The results are shown for InAs/AlSb quantum well, where TM mode optical gain can be as high as 4000cm ^-1. We also studied effects of doping on differential gain.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Editors	C.F. Gmachl, D.P. Bour
Pages	259-266
Number of pages	8
Volume	5365
DOIs	https://doi.org/10.1117/12.530465
State	Published - 2004
Externally published	Yes
Event	Novel In-Plane Semiconductor Lasers III - San Jose, CA, United States Duration: Jan 26 2004 → Jan 28 2004

Other

Other	Novel In-Plane Semiconductor Lasers III
Country/Territory	United States
City	San Jose, CA
Period	1/26/04 → 1/28/04

Keywords

Heterostructures
Mid infrared
Multiband Hamiltonian
Optical gain
Quantum wells
Type-II

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics

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10.1117/12.530465

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@inproceedings{353b781a4c2d49679c4b94aec1a1e2de,

title = "Doping-induced type-II to type-I transition and mid-IR optical gain in InAs/AlSb quantum wells",

abstract = "We study effects of modulation doping in a type-II quantum well by performing a self-consistent band structure calculation using the 8-band k · p theory. We show that modulation doping can convert a type-II quantum well structures into type-I. The associated band bending and charge redistribution lead to strong interband transition in such type-II structures comparable to that of a type-I quantum well. The results are shown for InAs/AlSb quantum well, where TM mode optical gain can be as high as 4000cm -1. We also studied effects of doping on differential gain. ",

keywords = "Heterostructures, Mid infrared, Multiband Hamiltonian, Optical gain, Quantum wells, Type-II",

author = "Kolokolov, \{K. I.\} and Cun-Zheng Ning",

year = "2004",

doi = "10.1117/12.530465",

language = "English (US)",

volume = "5365",

pages = "259--266",

editor = "C.F. Gmachl and D.P. Bour",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

note = "Novel In-Plane Semiconductor Lasers III ; Conference date: 26-01-2004 Through 28-01-2004",

}

TY - GEN

T1 - Doping-induced type-II to type-I transition and mid-IR optical gain in InAs/AlSb quantum wells

AU - Kolokolov, K. I.

AU - Ning, Cun-Zheng

PY - 2004

Y1 - 2004

N2 - We study effects of modulation doping in a type-II quantum well by performing a self-consistent band structure calculation using the 8-band k · p theory. We show that modulation doping can convert a type-II quantum well structures into type-I. The associated band bending and charge redistribution lead to strong interband transition in such type-II structures comparable to that of a type-I quantum well. The results are shown for InAs/AlSb quantum well, where TM mode optical gain can be as high as 4000cm -1. We also studied effects of doping on differential gain.

AB - We study effects of modulation doping in a type-II quantum well by performing a self-consistent band structure calculation using the 8-band k · p theory. We show that modulation doping can convert a type-II quantum well structures into type-I. The associated band bending and charge redistribution lead to strong interband transition in such type-II structures comparable to that of a type-I quantum well. The results are shown for InAs/AlSb quantum well, where TM mode optical gain can be as high as 4000cm -1. We also studied effects of doping on differential gain.

KW - Heterostructures

KW - Mid infrared

KW - Multiband Hamiltonian

KW - Optical gain

KW - Quantum wells

KW - Type-II

UR - https://www.scopus.com/pages/publications/3543101987

UR - https://www.scopus.com/pages/publications/3543101987#tab=citedBy

U2 - 10.1117/12.530465

DO - 10.1117/12.530465

M3 - Conference contribution

VL - 5365

SP - 259

EP - 266

BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Gmachl, C.F.

A2 - Bour, D.P.

T2 - Novel In-Plane Semiconductor Lasers III

Y2 - 26 January 2004 through 28 January 2004

ER -

Doping-induced type-II to type-I transition and mid-IR optical gain in InAs/AlSb quantum wells

Abstract

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Keywords

ASJC Scopus subject areas

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