Abstract
The droop property of blue GaN light emitting diodes (LEDs) has been improved by creating a 9 quantum well (QW) LED on a patterned sapphire substrate (PSS). The droop ratio was improved from 45.9 to 7.6. At a wavelength of 447nm, and with standard on-header packaging, the 9QW PSS-LED had an output power of 27.6mW and an EQE of 49.7 at a current of 20mA. The output power of the 9QW PSS-LED remains linear with increasing drive current, even up to relatively high current density, and the EQE is almost constant.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 335-336 |
| Number of pages | 2 |
| Journal | Electronics Letters |
| Volume | 47 |
| Issue number | 5 |
| DOIs | |
| State | Published - Mar 3 2011 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
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