TY - GEN
T1 - Dynamic Impedance Adjustment for Millimeter-Wave CMOS Low Noise Amplifiers Using a Current Injection Technique
AU - Moallemi, Soroush
AU - Bhardwaj, Sumit
AU - Kitchen, Jennifer
N1 - Funding Information: ACKNOWLEDGMENT This research was funded in part by the NSF I/UCRC Center for Embedded Systems NSF Grant #1361926, and through the industry sponsorship of Ball Aerospace and Technologies Corp. Publisher Copyright: © 2019 IEEE.
PY - 2019/3
Y1 - 2019/3
N2 - This work presents a novel technique for adjusting the input impedance of a low noise amplifier (LNA) using current injection. The proposed technique can significantly improve the input return loss under varying antenna impedance and/or process variation, with minimal effect on the amplifier's nominal performance. The simulation results show approximately 6dB input return loss improvement over the designed frequency range. The proposed current injection method is verified through the design of a single-stage LNA in a 28nm TSMC bulk CMOS technology. The LNA uses a 900mV supply voltage and operates from 17.5GHz to 20.5GHz. Nominally, the LNA exhibits 1.25dB of noise figure, 12dB of power gain, and dissipates approximately 14mW of power. Within this work, the LNA maintains an input return loss below -10dB under process (3σ), voltage (+10%), temperature (-40°C), and antenna impedance (45Ω) variations, without requiring stringent nominal design specifications, tuning, or trimming.
AB - This work presents a novel technique for adjusting the input impedance of a low noise amplifier (LNA) using current injection. The proposed technique can significantly improve the input return loss under varying antenna impedance and/or process variation, with minimal effect on the amplifier's nominal performance. The simulation results show approximately 6dB input return loss improvement over the designed frequency range. The proposed current injection method is verified through the design of a single-stage LNA in a 28nm TSMC bulk CMOS technology. The LNA uses a 900mV supply voltage and operates from 17.5GHz to 20.5GHz. Nominally, the LNA exhibits 1.25dB of noise figure, 12dB of power gain, and dissipates approximately 14mW of power. Within this work, the LNA maintains an input return loss below -10dB under process (3σ), voltage (+10%), temperature (-40°C), and antenna impedance (45Ω) variations, without requiring stringent nominal design specifications, tuning, or trimming.
KW - CMOS integrated circuits
KW - RF
KW - amplifier
KW - current-injection
KW - low-noise amplifiers
KW - noise-figure
KW - wideband
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U2 - 10.1109/WMCaS.2019.8732554
DO - 10.1109/WMCaS.2019.8732554
M3 - Conference contribution
T3 - Proceedings of the 2019 Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2019
BT - Proceedings of the 2019 Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2019 Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2019
Y2 - 28 March 2019 through 29 March 2019
ER -