Abstract
SrTiO 3 (or ST) and (Ba, Sr)TiO 3 (or BST) thin films were deposited on Pt passivated Si substrates below 400°C, using β-diketonates of Ba, Sr, and Ti, electron cyclotron resonance (ECR) plasma-enhanced chemical vapor deposition (CVD), and direct liquid injection system. Reported here are results from various thin-film characterization techniques including TEM and SEM. To optimize the processing parameters with respect to phase purity, Sr/Ti ratio, and permittivity, the method of design of experiments was implemented. The as-deposited (at 390°C), unannealed ST films exhibited a permittivity of 120 and an ohmic contact with the bottom Pt electrode. The former was attributed to the small grain size (150-200 A) and presence of Sr rich second phases. The latter was related to the observed incubation period at the initial nucleation stages of film growth.
| Original language | English (US) |
|---|---|
| Title of host publication | Integrated Ferroelectrics |
| Pages | 305-318 |
| Number of pages | 14 |
| Volume | 21 |
| Edition | 1-4 |
| State | Published - 1998 |
Keywords
- (Ba,Sr)TiO
- CVD
- Design of experiments
- Direct liquid injection
- ECR
- SrTiO
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy (miscellaneous)
- Condensed Matter Physics