Effects of the injection current profile shape on sidelobes in large-aperture semiconductor laser amplifiers

J. K. White; J. G. McInerney; J. V. Moloney

doi:10.1364/OL.20.000593

Effects of the injection current profile shape on sidelobes in large-aperture semiconductor laser amplifiers

J. K. White
, J. G. McInerney
, J. V. Moloney

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Sharply peaked near-field sidelobes are formed when the input optical field pattern interacts with the edges of the current stripe in a semiconductor laser amplifier. The strength of this interaction is shown theoretically to depend principally on the first and second derivatives of the transverse current profile, and hence one can suppress the sidelobes by smoothing the sharp edges in the current injection.

Original language	English (US)
Pages (from-to)	593-595
Number of pages	3
Journal	Optics letters
Volume	20
Issue number	6
DOIs	https://doi.org/10.1364/OL.20.000593
State	Published - Mar 15 1995

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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10.1364/OL.20.000593

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title = "Effects of the injection current profile shape on sidelobes in large-aperture semiconductor laser amplifiers",

abstract = "Sharply peaked near-field sidelobes are formed when the input optical field pattern interacts with the edges of the current stripe in a semiconductor laser amplifier. The strength of this interaction is shown theoretically to depend principally on the first and second derivatives of the transverse current profile, and hence one can suppress the sidelobes by smoothing the sharp edges in the current injection.",

author = "White, \{J. K.\} and McInerney, \{J. G.\} and Moloney, \{J. V.\}",

year = "1995",

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journal = "Optics letters",

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T1 - Effects of the injection current profile shape on sidelobes in large-aperture semiconductor laser amplifiers

AU - White, J. K.

AU - McInerney, J. G.

AU - Moloney, J. V.

PY - 1995/3/15

Y1 - 1995/3/15

N2 - Sharply peaked near-field sidelobes are formed when the input optical field pattern interacts with the edges of the current stripe in a semiconductor laser amplifier. The strength of this interaction is shown theoretically to depend principally on the first and second derivatives of the transverse current profile, and hence one can suppress the sidelobes by smoothing the sharp edges in the current injection.

AB - Sharply peaked near-field sidelobes are formed when the input optical field pattern interacts with the edges of the current stripe in a semiconductor laser amplifier. The strength of this interaction is shown theoretically to depend principally on the first and second derivatives of the transverse current profile, and hence one can suppress the sidelobes by smoothing the sharp edges in the current injection.

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UR - https://www.scopus.com/pages/publications/0029259950#tab=citedBy

U2 - 10.1364/OL.20.000593

DO - 10.1364/OL.20.000593

M3 - Article

SN - 0146-9592

VL - 20

SP - 593

EP - 595

JO - Optics letters

JF - Optics letters

IS - 6

ER -

Effects of the injection current profile shape on sidelobes in large-aperture semiconductor laser amplifiers

Abstract

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