TY - JOUR
T1 - Electrical passivation of III-V multijunction solar cells with luminescent coupling effect
AU - Yu Jeco-Espaldon, Bernice Mae
AU - Tamaki, Ryo
AU - Giteau, Maxime
AU - Xu, Hao
AU - Ahsan, Nazmul
AU - King, Richard R.
AU - Okada, Yoshitaka
N1 - Funding Information: This work is partly performed under the research and development of ultra-high efficiency and low-cost III-V compound semiconductor solar cell modules supported by National Research and Development Agency , New Energy and Industrial Technology Development Organization (NEDO) , and Ministry of Economy, Trade, and Industry (METI), Japan , and partly supported by the Engineering Research Center (ERC) Program of the National Science Foundation (NSF) and the Office of Energy Efficiency and Renewable Energy of the Department of Energy (DOE) under NSF Cooperative Agreement No. EEC-1041895 . The authors would like to thank Kentaroh Watanabe (Research Center for Advanced Science and Technology, The University of Tokyo ), Carrie Sinclair, Jaime Quintero, Scott Ageno, Kevin Nordquist ( Center for Solid State Electronics Research, Arizona State University ) and Abhinav Chikhalkar (Solar Power Lab, Arizona State University ) for the highly dedicated support they extended during the Al 2 O 3 passivation of InGaP/GaAs/Ge 3JSC devices and Chaomin Zhang and Pradeep Balaji (Solar Power Lab, Arizona State University ) for their invaluable contribution to the preparation of Si masks. B.M. Yu Jeco-Espaldon acknowledges the Japan Society for the Promotion of Science (JSPS) for providing financial support to her graduate studies. Funding Information: This work is partly performed under the research and development of ultra-high efficiency and low-cost III-V compound semiconductor solar cell modules supported by National Research and Development Agency, New Energy and Industrial Technology Development Organization (NEDO), and Ministry of Economy, Trade, and Industry (METI), Japan, and partly supported by the Engineering Research Center (ERC) Program of the National Science Foundation (NSF) and the Office of Energy Efficiency and Renewable Energy of the Department of Energy (DOE) under NSF Cooperative Agreement No. EEC-1041895. The authors would like to thank Kentaroh Watanabe (Research Center for Advanced Science and Technology, The University of Tokyo), Carrie Sinclair, Jaime Quintero, Scott Ageno, Kevin Nordquist (Center for Solid State Electronics Research, Arizona State University) and Abhinav Chikhalkar (Solar Power Lab, Arizona State University) for the highly dedicated support they extended during the Al2O3 passivation of InGaP/GaAs/Ge 3JSC devices and Chaomin Zhang and Pradeep Balaji (Solar Power Lab, Arizona State University) for their invaluable contribution to the preparation of Si masks. B.M. Yu Jeco-Espaldon acknowledges the Japan Society for the Promotion of Science (JSPS) for providing financial support to her graduate studies. Publisher Copyright: © 2022
PY - 2023/1
Y1 - 2023/1
N2 - Perimeter recombination is one of the causes identified for having a nonuniform luminescent coupling effect in III-V multijunction solar cells. A potential solution could be the electrical passivation of the multijunction solar cell perimeter. To test this hypothesis, electrical passivation of InGaP/GaAs/Ge 3-junction solar cells was done by the atomic layer deposition of thin Al2O3 films. Perimeter passivation of a 3-junction solar cell relatively increased current collection measured at luminescent coupling and direct subcell excitation by as much as 11.4% and 29.8%, respectively. Meanwhile, the current homogeneity improved relatively by as much as 7.9% after electrical passivation. At 1-sun global standard illumination (AM 1.5G), 0.2% absolute conversion efficiency increase was achieved. Therefore, electrical passivation of fully working III-V multijunction solar cells is a non-invasive, post-treatment process that can recover losses due to surface defects caused by oxidation.
AB - Perimeter recombination is one of the causes identified for having a nonuniform luminescent coupling effect in III-V multijunction solar cells. A potential solution could be the electrical passivation of the multijunction solar cell perimeter. To test this hypothesis, electrical passivation of InGaP/GaAs/Ge 3-junction solar cells was done by the atomic layer deposition of thin Al2O3 films. Perimeter passivation of a 3-junction solar cell relatively increased current collection measured at luminescent coupling and direct subcell excitation by as much as 11.4% and 29.8%, respectively. Meanwhile, the current homogeneity improved relatively by as much as 7.9% after electrical passivation. At 1-sun global standard illumination (AM 1.5G), 0.2% absolute conversion efficiency increase was achieved. Therefore, electrical passivation of fully working III-V multijunction solar cells is a non-invasive, post-treatment process that can recover losses due to surface defects caused by oxidation.
KW - Atomic layer deposition
KW - Current mapping
KW - Luminescence coupling
KW - Multijunction solar cell
KW - Passivation
KW - Recombination
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U2 - https://doi.org/10.1016/j.solmat.2022.112045
DO - https://doi.org/10.1016/j.solmat.2022.112045
M3 - Article
SN - 0927-0248
VL - 249
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
M1 - 112045
ER -