TY - JOUR
T1 - ELECTRO-OPTICAL CHARACTERIZATION OF THE TEKTRONIX TK512M-011 CHARGE-COUPLED DEVICE.
AU - Epperson, Patrick M.
AU - Sweedler, Jonathan V.
AU - Denton, M. Bonner
AU - Sims, Gary R.
AU - McCurnin, Thomas W.
AU - Aikens, Richard S.
PY - 1987
Y1 - 1987
N2 - The electro-optical characterization of the first in a new series of Tektronix CCDs is described. This device, the TK512M-011, is a frontside-illuminated CCD with a 512 by 512 format and 27 by 27 mu m pixels. Electro-optical characteristics measured in this study include linearity, blooming, dark count rate, charge-transfer efficiency (CTE), and quantum efficiency. The results of a detailed study of the noise characteristics of the CCD output FET are reported. The TK512M-011 has excellent photometric linearity, high well capacity, and a low dark count rate. Very good low light level CTE is observed in the parallel shift direction; however, CTE problems are observed in the serial direction. The quantum efficiency of the front-side-illuminated CCD over the wavelength range of 400 to 1000 nm is lower than expected based on experience with similar devices. The noise of the output FET of the CCD is equivalent to 5 to 12 electrons, depending on the FET operating conditions and system bandwidth.
AB - The electro-optical characterization of the first in a new series of Tektronix CCDs is described. This device, the TK512M-011, is a frontside-illuminated CCD with a 512 by 512 format and 27 by 27 mu m pixels. Electro-optical characteristics measured in this study include linearity, blooming, dark count rate, charge-transfer efficiency (CTE), and quantum efficiency. The results of a detailed study of the noise characteristics of the CCD output FET are reported. The TK512M-011 has excellent photometric linearity, high well capacity, and a low dark count rate. Very good low light level CTE is observed in the parallel shift direction; however, CTE problems are observed in the serial direction. The quantum efficiency of the front-side-illuminated CCD over the wavelength range of 400 to 1000 nm is lower than expected based on experience with similar devices. The noise of the output FET of the CCD is equivalent to 5 to 12 electrons, depending on the FET operating conditions and system bandwidth.
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U2 - 10.1117/12.7974140
DO - 10.1117/12.7974140
M3 - Article
SN - 0091-3286
VL - 26
SP - 715
EP - 724
JO - Optical Engineering
JF - Optical Engineering
IS - 8
ER -