Abstract
The electron transport properties of the narrow‐gap semiconductors InSb and InAs are calculated by a Monte Carlo procedure. The drift velocity and electron distribution function are found to be affected at high electric fields by the inclusion of impact ionization collisions, and the negative differential conductivity is correspondingly reduced.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 569-575 |
| Number of pages | 7 |
| Journal | physica status solidi (a) |
| Volume | 20 |
| Issue number | 2 |
| DOIs | |
| State | Published - Dec 16 1973 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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