Energy-efficient non-boolean computing with spin neurons and resistive memory

Emerging nonvolatile resistive memory technologies can be potentially suitable for computationally expensive analog pattern-matching tasks. However, the use of CMOS analog circuits with resistive crossbar memory (RCM) would result in large power consumption and poor scalability, thereby eschewing the benefits of RCM-based computation. We explore the potential of emerging spin-torque devices for RCM-based approximate computing circuits. Emerging spin-torque switching techniques may lead to nanoscale, current-mode spintronic switches that can be used for energy-efficient analog-mode data processing. We propose the use of such low-voltage, fast-switching, magnetometallic 'spin neurons' for ultralow power non-Boolean computing with RCM. We present the design of analog associative memory for face recognition using RCM, where, substituting conventional analog circuits with spin neurons can achieve ∼100× lower power consumption.