TY - GEN
T1 - Evaluation of Dilute Bismide Materials for Mid-IR Applications
AU - Hader, J.
AU - Badescu, S. C.
AU - Bannow, L. C.
AU - Moloney, J. V.
AU - Johnson, S. R.
AU - Koch, S. W.
N1 - Funding Information: This work was supported by the U.S. Air Force Office of Scientific Research, contract FA9550-16-C-0021. Publisher Copyright: © 2018 IEEE.
PY - 2018/10/30
Y1 - 2018/10/30
N2 - The introduction of Bismide in InAs leads to a strong bandgap reduction on the order of 40-50meV per percent Bi-admixture. This allows InAsBi to be able to reach mid-IR wavelengths in the 3-5 μm range with less than about three percent Bi. Typically, materials for this wavelength range suffer from very strong Auger losses. These have so far limited room-temperature CW operation in devices based on type-I quantum wells to wavelength shorter than about 3.5 μm.
AB - The introduction of Bismide in InAs leads to a strong bandgap reduction on the order of 40-50meV per percent Bi-admixture. This allows InAsBi to be able to reach mid-IR wavelengths in the 3-5 μm range with less than about three percent Bi. Typically, materials for this wavelength range suffer from very strong Auger losses. These have so far limited room-temperature CW operation in devices based on type-I quantum wells to wavelength shorter than about 3.5 μm.
UR - https://www.scopus.com/pages/publications/85057372298
UR - https://www.scopus.com/pages/publications/85057372298#tab=citedBy
UR - http://www.scopus.com/inward/record.url?scp=85057372298&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85057372298&partnerID=8YFLogxK
U2 - 10.1109/ISLC.2018.8516227
DO - 10.1109/ISLC.2018.8516227
M3 - Conference contribution
T3 - Conference Digest - IEEE International Semiconductor Laser Conference
SP - 183
EP - 184
BT - 26th International Semiconductor Laser Conference, ISLC 2018
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 26th International Semiconductor Laser Conference, ISLC 2018
Y2 - 16 September 2018 through 19 September 2018
ER -