Exchange effects in hot plasmas in semiconductors

A. M. Kriman; R. P. Joshi; M. J. Kann

doi:10.1088/0268-1242/7/3B/058

Exchange effects in hot plasmas in semiconductors

A. M. Kriman, R. P. Joshi, M. J. Kann

Electrical Engineering

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6 Scopus citations

Abstract

The authors describe a many-body semiclassical approximation for simulating electronic motion. Semiclassical trajectories in this approach are determined from spin-dependent forces and effective mass corrections, which incorporate effects of Heisenberg uncertainty, and the Pauli repulsion and exchange interactions of fermion statistics. The method has been implemented jointly with an ensemble Monte Carlo treatment of phonon scattering, and numerical simulations performed for GaAs. Numerical results indicate that in the femtosecond-scale relaxation of laser-excited plasmas, quantum corrections to the electronic motion will become significant for excitation densities above 2*10¹⁸ cm^-3.

Original language	English (US)
Article number	058
Pages (from-to)	B243-B247
Journal	Semiconductor Science and Technology
Volume	7
Issue number	3 B
DOIs	https://doi.org/10.1088/0268-1242/7/3B/058
State	Published - Dec 1 1992

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/7/3B/058

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title = "Exchange effects in hot plasmas in semiconductors",

abstract = "The authors describe a many-body semiclassical approximation for simulating electronic motion. Semiclassical trajectories in this approach are determined from spin-dependent forces and effective mass corrections, which incorporate effects of Heisenberg uncertainty, and the Pauli repulsion and exchange interactions of fermion statistics. The method has been implemented jointly with an ensemble Monte Carlo treatment of phonon scattering, and numerical simulations performed for GaAs. Numerical results indicate that in the femtosecond-scale relaxation of laser-excited plasmas, quantum corrections to the electronic motion will become significant for excitation densities above 2*1018 cm-3.",

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AU - Kriman, A. M.

AU - Joshi, R. P.

AU - Kann, M. J.

PY - 1992/12/1

Y1 - 1992/12/1

N2 - The authors describe a many-body semiclassical approximation for simulating electronic motion. Semiclassical trajectories in this approach are determined from spin-dependent forces and effective mass corrections, which incorporate effects of Heisenberg uncertainty, and the Pauli repulsion and exchange interactions of fermion statistics. The method has been implemented jointly with an ensemble Monte Carlo treatment of phonon scattering, and numerical simulations performed for GaAs. Numerical results indicate that in the femtosecond-scale relaxation of laser-excited plasmas, quantum corrections to the electronic motion will become significant for excitation densities above 2*1018 cm-3.

AB - The authors describe a many-body semiclassical approximation for simulating electronic motion. Semiclassical trajectories in this approach are determined from spin-dependent forces and effective mass corrections, which incorporate effects of Heisenberg uncertainty, and the Pauli repulsion and exchange interactions of fermion statistics. The method has been implemented jointly with an ensemble Monte Carlo treatment of phonon scattering, and numerical simulations performed for GaAs. Numerical results indicate that in the femtosecond-scale relaxation of laser-excited plasmas, quantum corrections to the electronic motion will become significant for excitation densities above 2*1018 cm-3.

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JO - Semiconductor Science and Technology

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ER -

Exchange effects in hot plasmas in semiconductors

Abstract

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