Excimer-laser-induced crystallization of hydrogenated amorphous silicon

K. Winer; G. B. Anderson; S. E. Ready; R. Z. Bachrach; R. I. Johnson; F. A. Ponce; J. B. Boyce

doi:10.1063/1.103897

Excimer-laser-induced crystallization of hydrogenated amorphous silicon

K. Winer
, G. B. Anderson
, S. E. Ready
, R. Z. Bachrach
, R. I. Johnson
, F. A. Ponce
, J. B. Boyce

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

The electronic transport properties and structural morphology of fast-pulse excimer-laser- crystallized hydrogenated amorphous silicon (a-Si:H) thin films have been measured. The room-temperature dark dc conductivities and Hall mobilities increase by several orders of magnitude at well-defined laser energy density thresholds which decrease as the impurity concentration in the films increases. The structural morphology of the films suggests an impurity-induced reduction of the a-Si:H melt temperature as the origin of this behavior.

Original language	English (US)
Pages (from-to)	2222-2224
Number of pages	3
Journal	Applied Physics Letters
Volume	57
Issue number	21
DOIs	https://doi.org/10.1063/1.103897
State	Published - 1990
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.103897

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@article{8157001488d54881b95c6c718bbe58cc,

title = "Excimer-laser-induced crystallization of hydrogenated amorphous silicon",

abstract = "The electronic transport properties and structural morphology of fast-pulse excimer-laser- crystallized hydrogenated amorphous silicon (a-Si:H) thin films have been measured. The room-temperature dark dc conductivities and Hall mobilities increase by several orders of magnitude at well-defined laser energy density thresholds which decrease as the impurity concentration in the films increases. The structural morphology of the films suggests an impurity-induced reduction of the a-Si:H melt temperature as the origin of this behavior.",

author = "K. Winer and Anderson, \{G. B.\} and Ready, \{S. E.\} and Bachrach, \{R. Z.\} and Johnson, \{R. I.\} and Ponce, \{F. A.\} and Boyce, \{J. B.\}",

year = "1990",

doi = "10.1063/1.103897",

language = "English (US)",

volume = "57",

pages = "2222--2224",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "21",

}

TY - JOUR

T1 - Excimer-laser-induced crystallization of hydrogenated amorphous silicon

AU - Winer, K.

AU - Anderson, G. B.

AU - Ready, S. E.

AU - Bachrach, R. Z.

AU - Johnson, R. I.

AU - Ponce, F. A.

AU - Boyce, J. B.

PY - 1990

Y1 - 1990

N2 - The electronic transport properties and structural morphology of fast-pulse excimer-laser- crystallized hydrogenated amorphous silicon (a-Si:H) thin films have been measured. The room-temperature dark dc conductivities and Hall mobilities increase by several orders of magnitude at well-defined laser energy density thresholds which decrease as the impurity concentration in the films increases. The structural morphology of the films suggests an impurity-induced reduction of the a-Si:H melt temperature as the origin of this behavior.

AB - The electronic transport properties and structural morphology of fast-pulse excimer-laser- crystallized hydrogenated amorphous silicon (a-Si:H) thin films have been measured. The room-temperature dark dc conductivities and Hall mobilities increase by several orders of magnitude at well-defined laser energy density thresholds which decrease as the impurity concentration in the films increases. The structural morphology of the films suggests an impurity-induced reduction of the a-Si:H melt temperature as the origin of this behavior.

UR - https://www.scopus.com/pages/publications/0344002838

UR - https://www.scopus.com/pages/publications/0344002838#tab=citedBy

U2 - 10.1063/1.103897

DO - 10.1063/1.103897

M3 - Article

SN - 0003-6951

VL - 57

SP - 2222

EP - 2224

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Excimer-laser-induced crystallization of hydrogenated amorphous silicon

Abstract

ASJC Scopus subject areas

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