Experimental investigation of solid immersion lens lithography

Tao Chen; Tom Milster; Dongseok Nam; Seung Hune Yang

doi:10.1117/12.600065

Experimental investigation of solid immersion lens lithography

Tao Chen, Tom Milster, Dongseok Nam, Seung Hune Yang

Research output: Contribution to journal › Conference article › peer-review

4 Scopus citations

Abstract

There are several next generation technologies for high resolution lithography, such as ArF wet immersion, F2, EUV, etc. However, these technologies are very expensive because of projection lens and mask costs. Near-field optics using a solid immersion lens (SIL) can meet the requirement of high resolution in a cost-effective way. In this paper, a very compact and inexpensive high resolution system using a SIL is introduced and preliminary experimental results are presented using a 405nm laser diode system. The SIL is used with a modified conventional inverted microscope. The air gap between the SIL flat bottom surface and the wafer is kept less than 50nm. Optical reflected power from SIL bottom and wafer interface is used to control the gap. A high resolution experiment with 405nm wavelength is discussed.

Original language	English (US)
Article number	25
Pages (from-to)	254-261
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5754
Issue number	PART 1
DOIs	https://doi.org/10.1117/12.600065
State	Published - 2005
Event	Optical Microlithography XVIII - San Jose, CA, United States Duration: Mar 1 2005 → Mar 4 2005

Keywords

Lithography
Near-field optics
Solid immersion lens

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.600065

Cite this

@article{d71beaad7ad34b43a175ecfd2e81363c,

title = "Experimental investigation of solid immersion lens lithography",

abstract = "There are several next generation technologies for high resolution lithography, such as ArF wet immersion, F2, EUV, etc. However, these technologies are very expensive because of projection lens and mask costs. Near-field optics using a solid immersion lens (SIL) can meet the requirement of high resolution in a cost-effective way. In this paper, a very compact and inexpensive high resolution system using a SIL is introduced and preliminary experimental results are presented using a 405nm laser diode system. The SIL is used with a modified conventional inverted microscope. The air gap between the SIL flat bottom surface and the wafer is kept less than 50nm. Optical reflected power from SIL bottom and wafer interface is used to control the gap. A high resolution experiment with 405nm wavelength is discussed.",

keywords = "Lithography, Near-field optics, Solid immersion lens",

author = "Tao Chen and Tom Milster and Dongseok Nam and Yang, {Seung Hune}",

year = "2005",

doi = "10.1117/12.600065",

language = "English (US)",

volume = "5754",

pages = "254--261",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

number = "PART 1",

note = "Optical Microlithography XVIII ; Conference date: 01-03-2005 Through 04-03-2005",

}

TY - JOUR

T1 - Experimental investigation of solid immersion lens lithography

AU - Chen, Tao

AU - Milster, Tom

AU - Nam, Dongseok

AU - Yang, Seung Hune

PY - 2005

Y1 - 2005

N2 - There are several next generation technologies for high resolution lithography, such as ArF wet immersion, F2, EUV, etc. However, these technologies are very expensive because of projection lens and mask costs. Near-field optics using a solid immersion lens (SIL) can meet the requirement of high resolution in a cost-effective way. In this paper, a very compact and inexpensive high resolution system using a SIL is introduced and preliminary experimental results are presented using a 405nm laser diode system. The SIL is used with a modified conventional inverted microscope. The air gap between the SIL flat bottom surface and the wafer is kept less than 50nm. Optical reflected power from SIL bottom and wafer interface is used to control the gap. A high resolution experiment with 405nm wavelength is discussed.

AB - There are several next generation technologies for high resolution lithography, such as ArF wet immersion, F2, EUV, etc. However, these technologies are very expensive because of projection lens and mask costs. Near-field optics using a solid immersion lens (SIL) can meet the requirement of high resolution in a cost-effective way. In this paper, a very compact and inexpensive high resolution system using a SIL is introduced and preliminary experimental results are presented using a 405nm laser diode system. The SIL is used with a modified conventional inverted microscope. The air gap between the SIL flat bottom surface and the wafer is kept less than 50nm. Optical reflected power from SIL bottom and wafer interface is used to control the gap. A high resolution experiment with 405nm wavelength is discussed.

KW - Lithography

KW - Near-field optics

KW - Solid immersion lens

UR - http://www.scopus.com/inward/record.url?scp=25144523364&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=25144523364&partnerID=8YFLogxK

U2 - 10.1117/12.600065

DO - 10.1117/12.600065

M3 - Conference article

SN - 0277-786X

VL - 5754

SP - 254

EP - 261

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

IS - PART 1

M1 - 25

T2 - Optical Microlithography XVIII

Y2 - 1 March 2005 through 4 March 2005

ER -

Experimental investigation of solid immersion lens lithography

Abstract

Keywords

ASJC Scopus subject areas

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