Extended defects in GaAs/GaAs1-xSbx/GaAs (001) heterostructures

Abhinandan Gangopadhyay, Chaomin Zhang, Aymeric Maros, Nikolai Faleev, Richard R. King, Christiana B. Honsberg, David J. Smith

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


The atomic-scale structure of extended defects in GaAs/GaAs1-xSbx/GaAs (001) heterostructures has been characterized using aberration-corrected scanning transmission electron microscopy. The defect located at the tensile-strained GaAs(cap)/GaAs0.34Sb0.66 interface had no edge component in the {11¯0} projection plane and is identified as either a dissociated screw dislocation or a partial dislocation dipole. The associated intrinsic stacking fault is bounded by two 30° Shockley partial dislocations of opposite sign. Another defect, located at the compressively-strained GaAs0.91Sb0.09/GaAs(substrate) interface, is identified as a dissociated 90° dislocation. The associated intrinsic stacking fault is bounded by a 30° Shockley partial dislocation and a partial dislocation with a Burgers vector of either a/6[411¯] or a/6[141¯], where a is the lattice constant. Unpaired atomic columns observed at the cores of the 30° Shockley partial dislocations indicate that both defects belong primarily to the glide set.

Original languageEnglish (US)
Article number115150
JournalScripta Materialia
StatePublished - Mar 1 2023


  • Compound semiconductors
  • Dislocations
  • Intrinsic stacking faults

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys


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