Extended performance GeSn/Si(100) p-i-n photodetectors for full spectral range telecommunication applications

Jay Mathews; Radek Roucka; Junqi Xie; Shui Qing Yu; Jose Menendez; John Kouvetakis

doi:10.1063/1.3238327

Extended performance GeSn/Si(100) p-i-n photodetectors for full spectral range telecommunication applications

Jay Mathews, Radek Roucka, Junqi Xie, Shui Qing Yu, Jose Menendez, John Kouvetakis

Research output: Contribution to journal › Article › peer-review

173 Scopus citations

Abstract

First-generation n-i-GeSn/p-Si(100) photodiode detectors with Ge _0.98Sn_0.02 active layers were fabricated under complementary metal oxide semiconductor compatible conditions. It is found that, even at this low Sn concentration, the detector quantum efficiencies are higher than those in comparable pure-Ge device designs processed at low temperature. Most significantly, the spectral range of the GeSn device responsivity is dramatically increased-to at least 1750 nm-well beyond the direct band gap of Ge (1550 nm). This allows coverage of all telecommunication bands using entirely group IV materials.

Original language	English (US)
Article number	133506
Journal	Applied Physics Letters
Volume	95
Issue number	13
DOIs	https://doi.org/10.1063/1.3238327
State	Published - 2009

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Extended performance GeSn/Si(100) p-i-n photodetectors for full spectral range telecommunication applications",

abstract = "First-generation n-i-GeSn/p-Si(100) photodiode detectors with Ge 0.98Sn0.02 active layers were fabricated under complementary metal oxide semiconductor compatible conditions. It is found that, even at this low Sn concentration, the detector quantum efficiencies are higher than those in comparable pure-Ge device designs processed at low temperature. Most significantly, the spectral range of the GeSn device responsivity is dramatically increased-to at least 1750 nm-well beyond the direct band gap of Ge (1550 nm). This allows coverage of all telecommunication bands using entirely group IV materials.",

author = "Jay Mathews and Radek Roucka and Junqi Xie and Yu, {Shui Qing} and Jose Menendez and John Kouvetakis",

note = "Funding Information: This work was supported by AFOSR MURI (Grant No. FA9550-06-01-0442), by DOE under Grant No. DE-FG36-08GO18003, IFC-SRC/DARPA Focus Center. We thank Dr. M. Wistey for assistance with photolithography.",

year = "2009",

doi = "10.1063/1.3238327",

language = "English (US)",

volume = "95",

journal = "Applied Physics Letters",

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T1 - Extended performance GeSn/Si(100) p-i-n photodetectors for full spectral range telecommunication applications

AU - Mathews, Jay

AU - Roucka, Radek

AU - Xie, Junqi

AU - Yu, Shui Qing

AU - Menendez, Jose

AU - Kouvetakis, John

N1 - Funding Information: This work was supported by AFOSR MURI (Grant No. FA9550-06-01-0442), by DOE under Grant No. DE-FG36-08GO18003, IFC-SRC/DARPA Focus Center. We thank Dr. M. Wistey for assistance with photolithography.

PY - 2009

Y1 - 2009

N2 - First-generation n-i-GeSn/p-Si(100) photodiode detectors with Ge 0.98Sn0.02 active layers were fabricated under complementary metal oxide semiconductor compatible conditions. It is found that, even at this low Sn concentration, the detector quantum efficiencies are higher than those in comparable pure-Ge device designs processed at low temperature. Most significantly, the spectral range of the GeSn device responsivity is dramatically increased-to at least 1750 nm-well beyond the direct band gap of Ge (1550 nm). This allows coverage of all telecommunication bands using entirely group IV materials.

AB - First-generation n-i-GeSn/p-Si(100) photodiode detectors with Ge 0.98Sn0.02 active layers were fabricated under complementary metal oxide semiconductor compatible conditions. It is found that, even at this low Sn concentration, the detector quantum efficiencies are higher than those in comparable pure-Ge device designs processed at low temperature. Most significantly, the spectral range of the GeSn device responsivity is dramatically increased-to at least 1750 nm-well beyond the direct band gap of Ge (1550 nm). This allows coverage of all telecommunication bands using entirely group IV materials.

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Extended performance GeSn/Si(100) p-i-n photodetectors for full spectral range telecommunication applications

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