Fermi edge singularity in the luminescence of modulation-doped Ga 0.47In0.53As/Al0.48In0.52As single heterojunctions

Yong Hang Zhang; De Sheng Jiang; R. Cingolani; K. Ploog

doi:10.1063/1.102965

Fermi edge singularity in the luminescence of modulation-doped Ga _0.47In_0.53As/Al_0.48In_0.52As single heterojunctions

Yong Hang Zhang, De Sheng Jiang, R. Cingolani, K. Ploog

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

Modulation-doped Ga_0.47In_0.53As/Al _0.48In_0.52As single heterojunctions have been investigated by means of optical spectroscopy and magnetotransport measurements. Strong radiative recombination of the two-dimensional electron gas (2DEG) with photogenerated holes has been observed. The recombination is not k conserving, since the holes are weakly localized at the heterointerface opposite to the 2DEG region. At low temperature strong Fermi edge enhancement occurs in the luminescence of single heterojunctions with, for example, a dense electron sheet concentration of 2.5×10¹² cm^- ². The results show clear evidence for the influence of carrier concentration and temperature on the Fermi edge singularity. The linewidths of the luminescence spectra agree well with those estimated from the electron sheet carrier concentrations, which were determined from the Shubnikov-de Haas oscillations, using an ideal 2DEG model.

Original language	English (US)
Pages (from-to)	2195-2197
Number of pages	3
Journal	Applied Physics Letters
Volume	56
Issue number	22
DOIs	https://doi.org/10.1063/1.102965
State	Published - 1990
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.102965

Cite this

@article{d707077bb21d4cd4b382e4f5910c22c6,

title = "Fermi edge singularity in the luminescence of modulation-doped Ga 0.47In0.53As/Al0.48In0.52As single heterojunctions",

abstract = "Modulation-doped Ga0.47In0.53As/Al 0.48In0.52As single heterojunctions have been investigated by means of optical spectroscopy and magnetotransport measurements. Strong radiative recombination of the two-dimensional electron gas (2DEG) with photogenerated holes has been observed. The recombination is not k conserving, since the holes are weakly localized at the heterointerface opposite to the 2DEG region. At low temperature strong Fermi edge enhancement occurs in the luminescence of single heterojunctions with, for example, a dense electron sheet concentration of 2.5×1012 cm- 2. The results show clear evidence for the influence of carrier concentration and temperature on the Fermi edge singularity. The linewidths of the luminescence spectra agree well with those estimated from the electron sheet carrier concentrations, which were determined from the Shubnikov-de Haas oscillations, using an ideal 2DEG model.",

author = "Zhang, {Yong Hang} and Jiang, {De Sheng} and R. Cingolani and K. Ploog",

year = "1990",

doi = "10.1063/1.102965",

language = "English (US)",

volume = "56",

pages = "2195--2197",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "22",

}

TY - JOUR

T1 - Fermi edge singularity in the luminescence of modulation-doped Ga 0.47In0.53As/Al0.48In0.52As single heterojunctions

AU - Zhang, Yong Hang

AU - Jiang, De Sheng

AU - Cingolani, R.

AU - Ploog, K.

PY - 1990

Y1 - 1990

N2 - Modulation-doped Ga0.47In0.53As/Al 0.48In0.52As single heterojunctions have been investigated by means of optical spectroscopy and magnetotransport measurements. Strong radiative recombination of the two-dimensional electron gas (2DEG) with photogenerated holes has been observed. The recombination is not k conserving, since the holes are weakly localized at the heterointerface opposite to the 2DEG region. At low temperature strong Fermi edge enhancement occurs in the luminescence of single heterojunctions with, for example, a dense electron sheet concentration of 2.5×1012 cm- 2. The results show clear evidence for the influence of carrier concentration and temperature on the Fermi edge singularity. The linewidths of the luminescence spectra agree well with those estimated from the electron sheet carrier concentrations, which were determined from the Shubnikov-de Haas oscillations, using an ideal 2DEG model.

AB - Modulation-doped Ga0.47In0.53As/Al 0.48In0.52As single heterojunctions have been investigated by means of optical spectroscopy and magnetotransport measurements. Strong radiative recombination of the two-dimensional electron gas (2DEG) with photogenerated holes has been observed. The recombination is not k conserving, since the holes are weakly localized at the heterointerface opposite to the 2DEG region. At low temperature strong Fermi edge enhancement occurs in the luminescence of single heterojunctions with, for example, a dense electron sheet concentration of 2.5×1012 cm- 2. The results show clear evidence for the influence of carrier concentration and temperature on the Fermi edge singularity. The linewidths of the luminescence spectra agree well with those estimated from the electron sheet carrier concentrations, which were determined from the Shubnikov-de Haas oscillations, using an ideal 2DEG model.

UR - http://www.scopus.com/inward/record.url?scp=0040403858&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0040403858&partnerID=8YFLogxK

U2 - 10.1063/1.102965

DO - 10.1063/1.102965

M3 - Article

SN - 0003-6951

VL - 56

SP - 2195

EP - 2197

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

ER -

Fermi edge singularity in the luminescence of modulation-doped Ga _0.47In_0.53As/Al_0.48In_0.52As single heterojunctions

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this