Abstract
An alternative method of silicide formation by direct implantation of high doses of metal ions into polycrystalline silicon is discussed. The doses used were in the region of 5×1017cm2 at energies in excess of 150 keV. Low sheet resistance (<1 Ω/sq.) cobalt disilicide (polycide) layers were formed by this technique and subsequently oxidized to assess process compatibility. The method overcomes the problems associated with metal on poly-Si interdiffusion reactions, such as retarded diffusion due to surface barriers or uneven diffusion due to the presence of grain boundaries in the poly-Si. Hence, the technique can provide a high degree of control over silicide distribution.
| Original language | English (US) |
|---|---|
| Title of host publication | 1988 Proc Fifth Int IEEE VLSI Multilevel Interconnect Conf |
| Place of Publication | Piscataway, NJ, United States |
| Publisher | Publ by IEEE |
| Pages | 198-204 |
| Number of pages | 7 |
| State | Published - 1988 |
ASJC Scopus subject areas
- General Engineering