Full band monte carlo simulation of In0.7Ga0.3As junctionless nanowire field effect transistors

R. Hathwar; Marco Saraniti; Stephen Goodnick

doi:10.1109/NANO.2014.6968090

Full band monte carlo simulation of In_0.7Ga_0.3As junctionless nanowire field effect transistors

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Junctionless nanowire field effect transistors (JNFETs) are promising candidates for the next generation of ultrasmall, low power transistors. In the present paper, three-dimensional simulation results are presented on the performance of junctionless nanowire FETs. A full band Monte Carlo (MC) model is employed, modified to include quantum transport by self consistently solving the Schrödinger equation with a Poisson solver coupled to the full band MC transport equation. The capabilities of the model are demonstrated by simulating the performance of n-type In_0.7Ga_0.3As junctionless nanowire FETs including subthreshold swing.

Original language	English (US)
Title of host publication	Proceedings of the IEEE Conference on Nanotechnology
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	645-649
Number of pages	5
ISBN (Electronic)	9781479956227
DOIs	https://doi.org/10.1109/NANO.2014.6968090
State	Published - Nov 26 2014
Event	2014 14th IEEE International Conference on Nanotechnology, IEEE-NANO 2014 - Toronto, Canada Duration: Aug 18 2014 → Aug 21 2014

Publication series

Name	Proceedings of the IEEE Conference on Nanotechnology

Other

Other	2014 14th IEEE International Conference on Nanotechnology, IEEE-NANO 2014
Country/Territory	Canada
City	Toronto
Period	8/18/14 → 8/21/14

Keywords

FET. InGaAs
Full band
Monte Carlo
Nanowire

ASJC Scopus subject areas

Electrical and Electronic Engineering
Computer Science Applications
Modeling and Simulation
Instrumentation

Access to Document

10.1109/NANO.2014.6968090

Cite this

Hathwar, R., Saraniti, M., & Goodnick, S. (2014). Full band monte carlo simulation of In_0.7Ga_0.3As junctionless nanowire field effect transistors. In Proceedings of the IEEE Conference on Nanotechnology (pp. 645-649). Article 6968090 (Proceedings of the IEEE Conference on Nanotechnology). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2014.6968090

Full band monte carlo simulation of In_0.7Ga_0.3As junctionless nanowire field effect transistors. / Hathwar, R.; Saraniti, Marco ; Goodnick, Stephen.
Proceedings of the IEEE Conference on Nanotechnology. Institute of Electrical and Electronics Engineers Inc., 2014. p. 645-649 6968090 (Proceedings of the IEEE Conference on Nanotechnology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hathwar, R, Saraniti, M & Goodnick, S 2014, Full band monte carlo simulation of In_0.7Ga_0.3As junctionless nanowire field effect transistors. in Proceedings of the IEEE Conference on Nanotechnology., 6968090, Proceedings of the IEEE Conference on Nanotechnology, Institute of Electrical and Electronics Engineers Inc., pp. 645-649, 2014 14th IEEE International Conference on Nanotechnology, IEEE-NANO 2014, Toronto, Canada, 8/18/14. https://doi.org/10.1109/NANO.2014.6968090

@inproceedings{dcad6a6242184314a9916ac25ace88ac,

title = "Full band monte carlo simulation of In0.7Ga0.3As junctionless nanowire field effect transistors",

abstract = "Junctionless nanowire field effect transistors (JNFETs) are promising candidates for the next generation of ultrasmall, low power transistors. In the present paper, three-dimensional simulation results are presented on the performance of junctionless nanowire FETs. A full band Monte Carlo (MC) model is employed, modified to include quantum transport by self consistently solving the Schr{\"o}dinger equation with a Poisson solver coupled to the full band MC transport equation. The capabilities of the model are demonstrated by simulating the performance of n-type In0.7Ga0.3As junctionless nanowire FETs including subthreshold swing.",

keywords = "FET. InGaAs, Full band, Monte Carlo, Nanowire",

author = "R. Hathwar and Marco Saraniti and Stephen Goodnick",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 14th IEEE International Conference on Nanotechnology, IEEE-NANO 2014 ; Conference date: 18-08-2014 Through 21-08-2014",

year = "2014",

month = nov,

day = "26",

doi = "10.1109/NANO.2014.6968090",

language = "English (US)",

series = "Proceedings of the IEEE Conference on Nanotechnology",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "645--649",

booktitle = "Proceedings of the IEEE Conference on Nanotechnology",

}

TY - GEN

T1 - Full band monte carlo simulation of In0.7Ga0.3As junctionless nanowire field effect transistors

AU - Hathwar, R.

AU - Saraniti, Marco

AU - Goodnick, Stephen

PY - 2014/11/26

Y1 - 2014/11/26

N2 - Junctionless nanowire field effect transistors (JNFETs) are promising candidates for the next generation of ultrasmall, low power transistors. In the present paper, three-dimensional simulation results are presented on the performance of junctionless nanowire FETs. A full band Monte Carlo (MC) model is employed, modified to include quantum transport by self consistently solving the Schrödinger equation with a Poisson solver coupled to the full band MC transport equation. The capabilities of the model are demonstrated by simulating the performance of n-type In0.7Ga0.3As junctionless nanowire FETs including subthreshold swing.

AB - Junctionless nanowire field effect transistors (JNFETs) are promising candidates for the next generation of ultrasmall, low power transistors. In the present paper, three-dimensional simulation results are presented on the performance of junctionless nanowire FETs. A full band Monte Carlo (MC) model is employed, modified to include quantum transport by self consistently solving the Schrödinger equation with a Poisson solver coupled to the full band MC transport equation. The capabilities of the model are demonstrated by simulating the performance of n-type In0.7Ga0.3As junctionless nanowire FETs including subthreshold swing.

KW - FET. InGaAs

KW - Full band

KW - Monte Carlo

KW - Nanowire

UR - https://www.scopus.com/pages/publications/84919482040

UR - https://www.scopus.com/pages/publications/84919482040#tab=citedBy

U2 - 10.1109/NANO.2014.6968090

DO - 10.1109/NANO.2014.6968090

M3 - Conference contribution

T3 - Proceedings of the IEEE Conference on Nanotechnology

SP - 645

EP - 649

BT - Proceedings of the IEEE Conference on Nanotechnology

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2014 14th IEEE International Conference on Nanotechnology, IEEE-NANO 2014

Y2 - 18 August 2014 through 21 August 2014

ER -