Abstract
Diamond is generally considered as the ultimate semiconductor for high-power device applications. A few questions arise from this claim: Why is diamond the best semiconductor for such applications? What are the current devices exploiting these unique properties nowadays? What are the substrates available for the next generation of diamond devices? The aim of this chapter is to give some answers to these questions and to pave the way to diamond industrialization.
| Original language | English (US) |
|---|---|
| Title of host publication | Power Electronics Device Applications of Diamond Semiconductors |
| Publisher | Elsevier |
| Pages | 191-217 |
| Number of pages | 27 |
| ISBN (Electronic) | 9780081021835 |
| ISBN (Print) | 9780081021842 |
| DOIs | |
| State | Published - Jan 1 2018 |
Keywords
- MOSFET
- Power electronics
- breakdown voltage
- conductivity modulation
- devices performance
- figure of merit
- hetero-epitaxial diamond substrate
- high temperature operation
- hopping conduction
- on-resistance
- semiconductors
ASJC Scopus subject areas
- General Engineering
- General Materials Science
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