GaN-on-Si switched mode RF power amplifiers for non-constant envelope signals

Shishir Shukla; Jennifer Kitchen

doi:10.1109/PAWR.2017.7875581

GaN-on-Si switched mode RF power amplifiers for non-constant envelope signals

Shishir Shukla, Jennifer Kitchen

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Scopus citations

Abstract

This work implements three discrete switched mode power amplifier (PA) topologies, namely inverse class-D (CMCD), push-pull class-E and inverse push-pull class-E, in a GaN-on-Si process for medium power level (5-10W) femto/pico-cells base-station applications. The designs are analyzed and compared with respect to non-idealities such as bond-wire effects and input signal duty cycle variation. These architectures are designed for non-constant envelope inputs in the form of digitally modulated signals such as RFPWM, which undergoes duty cycle variation. After comparing the three topologies, this work concludes that an inverse push-pull class-E architecture gives highest output power and efficiency for GaN-based discrete power amplifiers. This inverse class-E PA achieves 61.5% drain efficiency at 37.7dBm output power in the 880MHz band.

Original language	English (US)
Title of host publication	Proceedings of the 2017 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, PAWR 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	88-91
Number of pages	4
ISBN (Electronic)	9781509034574
DOIs	https://doi.org/10.1109/PAWR.2017.7875581
State	Published - Mar 10 2017
Event	2017 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, PAWR 2017 - Phoenix, United States Duration: Jan 15 2017 → Jan 18 2017

Other

Other	2017 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, PAWR 2017
Country/Territory	United States
City	Phoenix
Period	1/15/17 → 1/18/17

Keywords

Class-E
GaN-on-Si
RF-PWM
power amplifiers
switch-mode

ASJC Scopus subject areas

Electrical and Electronic Engineering
Computer Networks and Communications

Access to Document

10.1109/PAWR.2017.7875581

Cite this

GaN-on-Si switched mode RF power amplifiers for non-constant envelope signals. / Shukla, Shishir; Kitchen, Jennifer.
Proceedings of the 2017 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, PAWR 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 88-91 7875581.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Shukla, S & Kitchen, J 2017, GaN-on-Si switched mode RF power amplifiers for non-constant envelope signals. in Proceedings of the 2017 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, PAWR 2017., 7875581, Institute of Electrical and Electronics Engineers Inc., pp. 88-91, 2017 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, PAWR 2017, Phoenix, United States, 1/15/17. https://doi.org/10.1109/PAWR.2017.7875581

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abstract = "This work implements three discrete switched mode power amplifier (PA) topologies, namely inverse class-D (CMCD), push-pull class-E and inverse push-pull class-E, in a GaN-on-Si process for medium power level (5-10W) femto/pico-cells base-station applications. The designs are analyzed and compared with respect to non-idealities such as bond-wire effects and input signal duty cycle variation. These architectures are designed for non-constant envelope inputs in the form of digitally modulated signals such as RFPWM, which undergoes duty cycle variation. After comparing the three topologies, this work concludes that an inverse push-pull class-E architecture gives highest output power and efficiency for GaN-based discrete power amplifiers. This inverse class-E PA achieves 61.5% drain efficiency at 37.7dBm output power in the 880MHz band.",

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GaN-on-Si switched mode RF power amplifiers for non-constant envelope signals

Abstract

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Keywords

ASJC Scopus subject areas

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