GaN-on-Si transformer-coupled class D power amplifier

M. Ruhul Hasin; Jennifer Kitchen; Bertran Ardouin

doi:10.1109/PAWR.2015.7139196

GaN-on-Si transformer-coupled class D power amplifier

M. Ruhul Hasin, Jennifer Kitchen, Bertran Ardouin

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

This work presents a transformer-coupled class D switched-mode power amplifier using GaN-on-Si. An aggressive time-domain compatible, scalable, Angelov device model is used to accurately predict transient switched-mode device behavior. Simulation and measurement results report the GaN power device's intrinsic device efficiency to be 62% when operating as a switch at 2.25Gb/s. The 2-transistor PA topology demonstrates 29.5% efficiency at maximum power. When driven with a silicon-based sigma-delta RF modulator, the PA processes a single-carrier WCDMA waveform with -40.4dBc ACPR₁.

Original language	English (US)
Title of host publication	PAWR 2015 - Proceedings; 2015 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479955060
DOIs	https://doi.org/10.1109/PAWR.2015.7139196
State	Published - Jun 29 2015
Event	2015 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, PAWR 2015 - San Diego, United States Duration: Jan 25 2015 → Jan 28 2015

Publication series

Name	PAWR 2015 - Proceedings; 2015 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications

Other

Other	2015 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, PAWR 2015
Country/Territory	United States
City	San Diego
Period	1/25/15 → 1/28/15

Keywords

Class-D
GaN
RF power amplifiers
WCDMA
device model
high-efficiency

ASJC Scopus subject areas

Computer Networks and Communications
Electrical and Electronic Engineering

Access to Document

10.1109/PAWR.2015.7139196

Cite this

Hasin, M. R., Kitchen, J., & Ardouin, B. (2015). GaN-on-Si transformer-coupled class D power amplifier. In PAWR 2015 - Proceedings; 2015 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications Article 7139196 (PAWR 2015 - Proceedings; 2015 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PAWR.2015.7139196

GaN-on-Si transformer-coupled class D power amplifier. / Hasin, M. Ruhul; Kitchen, Jennifer; Ardouin, Bertran.
PAWR 2015 - Proceedings; 2015 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications. Institute of Electrical and Electronics Engineers Inc., 2015. 7139196 (PAWR 2015 - Proceedings; 2015 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hasin, MR, Kitchen, J & Ardouin, B 2015, GaN-on-Si transformer-coupled class D power amplifier. in PAWR 2015 - Proceedings; 2015 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications., 7139196, PAWR 2015 - Proceedings; 2015 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, Institute of Electrical and Electronics Engineers Inc., 2015 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, PAWR 2015, San Diego, United States, 1/25/15. https://doi.org/10.1109/PAWR.2015.7139196

Hasin MR, Kitchen J, Ardouin B. GaN-on-Si transformer-coupled class D power amplifier. In PAWR 2015 - Proceedings; 2015 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications. Institute of Electrical and Electronics Engineers Inc. 2015. 7139196. (PAWR 2015 - Proceedings; 2015 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications). doi: 10.1109/PAWR.2015.7139196

Hasin, M. Ruhul ; Kitchen, Jennifer ; Ardouin, Bertran. / GaN-on-Si transformer-coupled class D power amplifier. PAWR 2015 - Proceedings; 2015 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications. Institute of Electrical and Electronics Engineers Inc., 2015. (PAWR 2015 - Proceedings; 2015 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications).

@inproceedings{cc7689c8884f4c42be0d3abf3eb810fa,

title = "GaN-on-Si transformer-coupled class D power amplifier",

abstract = "This work presents a transformer-coupled class D switched-mode power amplifier using GaN-on-Si. An aggressive time-domain compatible, scalable, Angelov device model is used to accurately predict transient switched-mode device behavior. Simulation and measurement results report the GaN power device's intrinsic device efficiency to be 62% when operating as a switch at 2.25Gb/s. The 2-transistor PA topology demonstrates 29.5% efficiency at maximum power. When driven with a silicon-based sigma-delta RF modulator, the PA processes a single-carrier WCDMA waveform with -40.4dBc ACPR1.",

keywords = "Class-D, GaN, RF power amplifiers, WCDMA, device model, high-efficiency",

author = "Hasin, {M. Ruhul} and Jennifer Kitchen and Bertran Ardouin",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 2015 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, PAWR 2015 ; Conference date: 25-01-2015 Through 28-01-2015",

year = "2015",

month = jun,

day = "29",

doi = "10.1109/PAWR.2015.7139196",

language = "English (US)",

series = "PAWR 2015 - Proceedings; 2015 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "PAWR 2015 - Proceedings; 2015 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications",

}

TY - GEN

T1 - GaN-on-Si transformer-coupled class D power amplifier

AU - Hasin, M. Ruhul

AU - Kitchen, Jennifer

AU - Ardouin, Bertran

PY - 2015/6/29

Y1 - 2015/6/29

N2 - This work presents a transformer-coupled class D switched-mode power amplifier using GaN-on-Si. An aggressive time-domain compatible, scalable, Angelov device model is used to accurately predict transient switched-mode device behavior. Simulation and measurement results report the GaN power device's intrinsic device efficiency to be 62% when operating as a switch at 2.25Gb/s. The 2-transistor PA topology demonstrates 29.5% efficiency at maximum power. When driven with a silicon-based sigma-delta RF modulator, the PA processes a single-carrier WCDMA waveform with -40.4dBc ACPR1.

AB - This work presents a transformer-coupled class D switched-mode power amplifier using GaN-on-Si. An aggressive time-domain compatible, scalable, Angelov device model is used to accurately predict transient switched-mode device behavior. Simulation and measurement results report the GaN power device's intrinsic device efficiency to be 62% when operating as a switch at 2.25Gb/s. The 2-transistor PA topology demonstrates 29.5% efficiency at maximum power. When driven with a silicon-based sigma-delta RF modulator, the PA processes a single-carrier WCDMA waveform with -40.4dBc ACPR1.

KW - Class-D

KW - GaN

KW - RF power amplifiers

KW - WCDMA

KW - device model

KW - high-efficiency

UR - http://www.scopus.com/inward/record.url?scp=84939833364&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84939833364&partnerID=8YFLogxK

U2 - 10.1109/PAWR.2015.7139196

DO - 10.1109/PAWR.2015.7139196

M3 - Conference contribution

T3 - PAWR 2015 - Proceedings; 2015 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications

BT - PAWR 2015 - Proceedings; 2015 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2015 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, PAWR 2015

Y2 - 25 January 2015 through 28 January 2015

ER -

GaN-on-Si transformer-coupled class D power amplifier

Abstract

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Keywords

ASJC Scopus subject areas

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