@inproceedings{a6ae7ca8b86f4cfbbd6c5f901b3c5924,
title = "Generation and recombination carrier lifetimes in 4H SiC epitaxial wafers",
abstract = "Compared to silicon, there have been relatively few comparative studies of recombination and carrier lifetimes in SiC. For the first time, both generation and recombination carrier lifetimes are reported from the same areas in 20 μm thick 4H SiC n-/n+ epi-wafer structures. The ratio of the generation to recombination lifetime is much different in SiC compared to Si. Activation energy calculated from SiC generation lifetimes shows that traps with energy levels near mid-gap dominate the generation lifetime. Comparison of both generation and recombination lifetimes and dislocation counts measured in the device area show no correlation in either case.",
keywords = "4H-SiC, Generation and recombination lifetimes, Oxide leakage currents",
author = "G. Chung and Loboda, \{M. J.\} and Marinella, \{M. J.\} and Schroder, \{D. K.\} and Klein, \{P. B.\} and T. Isaacs-Smith and Williams, \{J. W.\}",
year = "2009",
doi = "10.4028/www.scientific.net/msf.600-603.485",
language = "English (US)",
isbn = "9780878493579",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "485--488",
editor = "Akira Suzuki and Hajime Okumura and Kenji Fukuda and Shin-ichi Nishizawa and Tsunenobu Kimoto and Takashi Fuyuki",
booktitle = "Silicon Carbide and Related Materials 2007",
note = "12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 ; Conference date: 14-10-2007 Through 19-10-2007",
}