TY - GEN
T1 - Group-IV subcells in multijunction concentrator solar cells
AU - King, Richard R.
AU - Fetzer, Chris
AU - Chiu, Philip
AU - Rehder, Eric
AU - Edmondson, Ken
AU - Karam, Nasser
PY - 2013
Y1 - 2013
N2 - Group-IV solar cells have great value for increasing conversion efficiency when integrated with III-V subcells in multijunction solar cells, as in today's 3-junction GaInP/ GaInAs/ Ge concentrator cells that have demonstrated over 40% efficiency. New types of Ge, Si, SiGe, and SiGeSn subcells show the potential to increase multijunction efficiencies to still higher values. Cells incorporating both dilute nitride GaInNAs and active Ge substrate cells can reach over 46% production average efficiencies at 50.0 W/cm2 (500 suns), 25°C under the standard concentrated solar spectrum, with champion efficiencies over 48%.
AB - Group-IV solar cells have great value for increasing conversion efficiency when integrated with III-V subcells in multijunction solar cells, as in today's 3-junction GaInP/ GaInAs/ Ge concentrator cells that have demonstrated over 40% efficiency. New types of Ge, Si, SiGe, and SiGeSn subcells show the potential to increase multijunction efficiencies to still higher values. Cells incorporating both dilute nitride GaInNAs and active Ge substrate cells can reach over 46% production average efficiencies at 50.0 W/cm2 (500 suns), 25°C under the standard concentrated solar spectrum, with champion efficiencies over 48%.
UR - http://www.scopus.com/inward/record.url?scp=84885775441&partnerID=8YFLogxK
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U2 - 10.1149/05009.0287ecst
DO - 10.1149/05009.0287ecst
M3 - Conference contribution
SN - 9781607683575
T3 - ECS Transactions
SP - 287
EP - 295
BT - SiGe, Ge, and Related Compounds 5
PB - Electrochemical Society Inc.
T2 - 5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting
Y2 - 7 October 2012 through 12 October 2012
ER -