Growth of InN on Ge substrate by molecular beam epitaxy

Elaissa Trybus; Gon Namkoong; Walter Henderson; W. Alan Doolittle; Rong Liu; Jin Mei; Fernando Ponce; Maurice Cheung; Fei Chen; Madalina Furis; Alexander Cartwright

doi:10.1016/j.jcrysgro.2005.02.041

Growth of InN on Ge substrate by molecular beam epitaxy

Elaissa Trybus
, Gon Namkoong
, Walter Henderson
, W. Alan Doolittle
, Rong Liu
, Jin Mei
, Fernando Ponce
, Maurice Cheung
, Fei Chen
, Madalina Furis
, Alexander Cartwright

Physics

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

InN epitaxial growth on a (1 1 1)-oriented, Ga-doped germanium substrate using molecular beam epitaxy is described. X-ray diffraction and transmission electron microscopy investigations have shown that the InN epitaxial layer consists of a wurtzite structure, which has the epitaxial relationship of (0 0 0 1)_InN∥(1 1 1)_Ge. Transmission electron microscopy shows an intermediate layer at the interface between the InN/Ge substrate. Consistent with recent reports implying a narrow bandgap of InN [Phys. Stat Sol. B 229 (2002) R1, Appl. Phys. Lett. 80 (2002) 3967], a strong photoluminescence with peak energy of 0.69 eV at 15 K was observed for this InN epilayer, in contrast to the peak energy of 0.71 eV for Ga-doped Ge under the same measurement conditions.

Original language	English (US)
Pages (from-to)	311-315
Number of pages	5
Journal	Journal of Crystal Growth
Volume	279
Issue number	3-4
DOIs	https://doi.org/10.1016/j.jcrysgro.2005.02.041
State	Published - Jun 1 2005

Keywords

A3. Molecular beam epitaxy
B2. Semiconducting germanium
B3. Heterojunction semiconductor devices
B3. Semiconducting III-V materials

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2005.02.041

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title = "Growth of InN on Ge substrate by molecular beam epitaxy",

abstract = "InN epitaxial growth on a (1 1 1)-oriented, Ga-doped germanium substrate using molecular beam epitaxy is described. X-ray diffraction and transmission electron microscopy investigations have shown that the InN epitaxial layer consists of a wurtzite structure, which has the epitaxial relationship of (0 0 0 1)InN∥(1 1 1)Ge. Transmission electron microscopy shows an intermediate layer at the interface between the InN/Ge substrate. Consistent with recent reports implying a narrow bandgap of InN [Phys. Stat Sol. B 229 (2002) R1, Appl. Phys. Lett. 80 (2002) 3967], a strong photoluminescence with peak energy of 0.69 eV at 15 K was observed for this InN epilayer, in contrast to the peak energy of 0.71 eV for Ga-doped Ge under the same measurement conditions.",

keywords = "A3. Molecular beam epitaxy, B2. Semiconducting germanium, B3. Heterojunction semiconductor devices, B3. Semiconducting III-V materials",

author = "Elaissa Trybus and Gon Namkoong and Walter Henderson and Doolittle, \{W. Alan\} and Rong Liu and Jin Mei and Fernando Ponce and Maurice Cheung and Fei Chen and Madalina Furis and Alexander Cartwright",

year = "2005",

month = jun,

day = "1",

doi = "10.1016/j.jcrysgro.2005.02.041",

language = "English (US)",

volume = "279",

pages = "311--315",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "3-4",

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TY - JOUR

T1 - Growth of InN on Ge substrate by molecular beam epitaxy

AU - Trybus, Elaissa

AU - Namkoong, Gon

AU - Henderson, Walter

AU - Doolittle, W. Alan

AU - Liu, Rong

AU - Mei, Jin

AU - Ponce, Fernando

AU - Cheung, Maurice

AU - Chen, Fei

AU - Furis, Madalina

AU - Cartwright, Alexander

PY - 2005/6/1

Y1 - 2005/6/1

N2 - InN epitaxial growth on a (1 1 1)-oriented, Ga-doped germanium substrate using molecular beam epitaxy is described. X-ray diffraction and transmission electron microscopy investigations have shown that the InN epitaxial layer consists of a wurtzite structure, which has the epitaxial relationship of (0 0 0 1)InN∥(1 1 1)Ge. Transmission electron microscopy shows an intermediate layer at the interface between the InN/Ge substrate. Consistent with recent reports implying a narrow bandgap of InN [Phys. Stat Sol. B 229 (2002) R1, Appl. Phys. Lett. 80 (2002) 3967], a strong photoluminescence with peak energy of 0.69 eV at 15 K was observed for this InN epilayer, in contrast to the peak energy of 0.71 eV for Ga-doped Ge under the same measurement conditions.

AB - InN epitaxial growth on a (1 1 1)-oriented, Ga-doped germanium substrate using molecular beam epitaxy is described. X-ray diffraction and transmission electron microscopy investigations have shown that the InN epitaxial layer consists of a wurtzite structure, which has the epitaxial relationship of (0 0 0 1)InN∥(1 1 1)Ge. Transmission electron microscopy shows an intermediate layer at the interface between the InN/Ge substrate. Consistent with recent reports implying a narrow bandgap of InN [Phys. Stat Sol. B 229 (2002) R1, Appl. Phys. Lett. 80 (2002) 3967], a strong photoluminescence with peak energy of 0.69 eV at 15 K was observed for this InN epilayer, in contrast to the peak energy of 0.71 eV for Ga-doped Ge under the same measurement conditions.

KW - A3. Molecular beam epitaxy

KW - B2. Semiconducting germanium

KW - B3. Heterojunction semiconductor devices

KW - B3. Semiconducting III-V materials

UR - https://www.scopus.com/pages/publications/20844452183

UR - https://www.scopus.com/pages/publications/20844452183#tab=citedBy

U2 - 10.1016/j.jcrysgro.2005.02.041

DO - 10.1016/j.jcrysgro.2005.02.041

M3 - Article

SN - 0022-0248

VL - 279

SP - 311

EP - 315

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 3-4

ER -

Growth of InN on Ge substrate by molecular beam epitaxy

Abstract

Keywords

ASJC Scopus subject areas

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